This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong +4 more
wiley +1 more source
Bidirectional associations of recreational sedentary screen time and 24-h behaviors: a dynamic cross-sectional multilevel model analysis. [PDF]
Hasanaj K +6 more
europepmc +1 more source
Socioeconomic inequalities in tobacco smoking in women aged 15-54 in Iran: a multilevel model. [PDF]
Moradi G, Goodarzi E, Khosravi A.
europepmc +1 more source
WO3${\rm WO}_3$ based resistive switching device was precisely controlled and shows the reconfigurable, non‐volatile switching which can be programmable to multi‐resistance states for memory applications. The memory device can also be utilised for low energy neuromorphic application.
Keval Hadiyal +2 more
wiley +1 more source
Understanding variations and influencing factors on length of stay for T2DM patients based on a multilevel model. [PDF]
Liu W +5 more
europepmc +1 more source
A lead‐free perovskite memristive solar cell structure that call emulate both synaptic and neuronal functions controlled by light and electric fields depending on top electrode type. ABSTRACT Memristive devices based on halide perovskites hold strong promise to provide energy‐efficient systems for the Internet of Things (IoT); however, lead (Pb ...
Michalis Loizos +4 more
wiley +1 more source
Health facility and contextual correlates of HIV test positivity: a multilevel model of routine programmatic data from Malawi. [PDF]
Niwa M +10 more
europepmc +1 more source
Survey implementation process and interviewer effects on skipping sequence of maternal and child health indicators from National Family Health Survey: An application of cross-classified multilevel model. [PDF]
Sharma R +7 more
europepmc +1 more source
Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao +15 more
wiley +1 more source

