Results 271 to 280 of about 10,597,961 (334)

Magnetic Domain Texture in Fe3O4 Thin Films on SiO2 Nanospheres

open access: yesAdvanced Materials, EarlyView.
Fe3O4 thin films grown on ordered SiO2 nanospheres form curved nanocaps with 3D geometry, inducing magnetic domain texture. X‐ray spectromicroscopy (XMCD‐PEEM), cross‐sectional electron microscopy (STEM), and polarized grazing‐incidence small‐angle neutron scattering (GISANS) reveal how topography modulates magnetization.
Mai Hussein Hamed   +14 more
wiley   +1 more source

An Anti‐Myd88 Peptide Synergistically Enhances the Anti‐Inflammatory Effects of Extracellular Vesicles from Naïve Umbilical Cord MSC or HEK293F CD24 Overexpressing Cells

open access: yesAdvanced Materials Interfaces, EarlyView.
This study confirms that extracellular vesicles (EVs) derived from mesenchymal stem cells (MSCs) or HEK293F cells overexpressing CD24 have anti‐inflammatory effects in macrophages and monocytes. Further loading either of these EVs with an anti‐Myd88 peptide synergistically enhanced the anti‐inflammatory effects of the EVs.
Burçin İrem Abas   +6 more
wiley   +1 more source

Band Offsets from Angle‐Resolved Valence Band Photoemission Spectroscopy

open access: yesAdvanced Materials Interfaces, EarlyView.
Soft X‐ray Angle‐Resolved Photoemission Spectroscopy (SX‐ARPES) is employed to quantify conduction band offsets at semiconductor surfaces and interfaces by fitting valence band photoemission spectra. This method surpasses traditional techniques, providing accurate results for InAs and InSb systems.
Procopios Constantinou   +11 more
wiley   +1 more source

Engineering Electrical Transport by Implantation‐Induced Defects in CrN Films Without Affecting Thermal Conductivity

open access: yesAdvanced Materials Interfaces, EarlyView.
This study demonstrates how implantation‐induced defects in CrN thin films enable controlled tuning of electrical transport from metallic to semiconductor‐like behavior while preserving thermal conductivity. Through cumulative argon implantation, defect landscapes are engineered to manipulate carrier mobility and conduction mechanisms, revealing key ...
Hugo Bouteiller   +8 more
wiley   +1 more source

Halide Perovskite Quantum Dots Form a Scalable Unified Platform for Resistive Memories, Crossbar Networks, Neuromorphic Synapses, and Field Effect Transistors

open access: yesAdvanced Materials Interfaces, EarlyView.
Halide perovskite quantum dots, with their flexible ABX3 lattice enabling collaborative electronic and ionic transport, offer scalable, low‐cost routes to resistive memories, opto‐electronic control, neuromorphic devices, and field‐effect transistors.
Hyojung Kim
wiley   +1 more source

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