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Fabrication of beryllide pebble as advanced neutron multiplier
Fusion Engineering and Design, 2014Abstract Fusion reactors require advanced neutron multipliers with great stability at high temperatures. Beryllium intermetallic compounds, called beryllides such as Be 12 Ti, are the most promising materials for use as advanced neutron multipliers. However, few studies have been conducted on the development of mass production methods for beryllide ...
Masaru Nakamichi, Jae-Hwan Kim
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Fabrication of an electron multiplier utilizing diamond films
Thin Solid Films, 1994High secondary electron yields (sigma=14-27) from polycrystalline diamond films on Mo substrates have been reported previously. We observed that continuous exposure to an electron beam degraded the secondary yield in vacuum as a function of fluence owing to a loss of surface hydrogen.
G.T. Mearini +5 more
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A new technique for fabrication of a Gas Electron Multiplier
2000 IEEE Nuclear Science Symposium. Conference Record (Cat. No.00CH37149), 2002The Gas Electron Multiplier (GEM) represents one of the most promising micro-pattern detectors for providing stable, charge multiplication over a wide range of active areas, and with genuinely affordable and reproducible fabrication methods. Several important characteristics of the GEM remain to be investigated and optimized.
P. Rehak, G.C. Smith, J.B. Warren, B. Yu
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Forming simulation of multiply thermoplastic composites with continuous fabrics
, 2006 D. Soulat, Philippe Boisse
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Beryllide pebble fabrication of Be–Zr compositions as advanced neutron multipliers
Fusion Engineering and Design, 2016Abstract Fusion reactors require advanced neutron multipliers with high stability at high temperatures. Beryllium intermetallic compounds (beryllides) have a universally robust potential for high temperature use. Fabrication of beryllide pebbles of Be–Zr compositions was conducted from the viewpoint of pebble mass production.
Masaru Nakamichi +2 more
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Design and Fabrication of Broadband Hybrid GaAs Schottky Diode Frequency Multipliers
IEEE Transactions on Microwave Theory and Techniques, 2013Frequency extender modules of vector network analyzers and signal generators, as well as front-end modules of semiconductor automatic test systems, make use of broadband resistive diode frequency multipliers. This paper presents the design and fabrication of innovative planar varistor frequency multipliers. Three frequency triplers (#1, #2, #3) and two
Michael Hrobak +4 more
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Design and Fabrication of An Improved Capacitor Multiplier with Good Frequency Characteristics
Journal of the Institute of Electronics Engineers of Korea, 2013In this paper, a capacitor multiplier with good frequency characteristics has been proposed. Effective capacitance of conventional capacitor multiplier decreases as frequency increases due to internal series resistance. On the other hand, the proposed capacitor multiplier using cascode structure has smaller internal resistance, thus shows good ...
Dae-Hwan Lee +4 more
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Development of materials and fabrication of porous and pebble bed beryllium multipliers
Journal of Nuclear Materials, 2000Abstract Beryllium is considered to be a neutron multiplier material for the reference ITER breeding blanket. The main requirements for the porous beryllium multiplier for the breeding blanket are: (1) inherently open porosity within 20 ± 2% for easy removal of radioactive gases; (2) high thermal conductivity; (3) close contact with a stainless steel
D.A. Davydov +5 more
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High-speed GaAs multipliers fabricated with a high-yield 0.4- mu m process
IEEE Transactions on Electron Devices, 1993A 0.4- mu m GaAs IC fabrication process which demonstrates excellent yields for direct-coupled FET logic circuits of up to 5000 gates for high-speed LSI digital applications is discussed. The refractory self-aligned gate process uses 1- mu m stepper lithography.
R.A. Sadler, G.D. Studtmann, H.P. Singh
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Fabrication of 200 to 2700 GHz multiplier devices using GaAs and metal membranes
2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157), 2002Multiplier device fabrication techniques have been developed to enable robust implementation of monolithic circuits well into the THz frequency range. To minimize the dielectric loading of the waveguides, some circuits are realized entirely on a 3 /spl mu/m thick GaAs membrane with metal beamleads acting as RF probes and DC contact points.
S. Martin +9 more
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