Results 181 to 190 of about 24,991 (251)

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

open access: yesAdvanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song   +10 more
wiley   +1 more source

Wearable Fabric Electrotactile System with Stimulation-Inhibition Electrode Units. [PDF]

open access: yesCyborg Bionic Syst
Yao H   +17 more
europepmc   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

open access: yesAdvanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho   +6 more
wiley   +1 more source

Electrical Control of Single Photon Emitters in WSe<sub>2</sub> on a Si Nanopyramid Array with a Negligible Stark Effect. [PDF]

open access: yesNano Lett
Behera S   +7 more
europepmc   +1 more source

Ultra‐Low Power Consumption and Highly Durability in Sm:HfO2 Thin Film Ferroelectric Memristor for Edge Detection

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT With the continuous development of computer image processing, developing efficient and low‐power computing devices has become a key challenge. Memristors have integrated in‐situ storage and computing capabilities, making them an ideal choice for low‐power image processing computing architectures. However, current memristors are confronted with
Tengyu Li   +4 more
wiley   +1 more source

Silicon Nitride Resistive Memories

open access: yesAdvanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis   +7 more
wiley   +1 more source

Event-Driven Neuromorphic Gaze Decoding via e-Skin Electrooculography. [PDF]

open access: yesACS Nano
Jeong S   +23 more
europepmc   +1 more source

Bio‐Inspired Mechanical Amplification Block on Implantable Tactile Sensors

open access: yesAdvanced Electronic Materials, EarlyView.
 . ABSTRACT Implantable strain sensors offer opportunities for continuous biomechanical monitoring, but their performance deteriorates severely once embedded in soft tissue due to mechanical shielding that suppresses strain transmission to the sensing layer.
Sungbin Choi   +5 more
wiley   +1 more source

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