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Monolithic integration of p- and n-type doped 2D WSe2 for wafer-scale complementary logic circuits [PDF]

open access: yesNature Communications
Atomically thin two-dimensional (2D) semiconductors are promising candidates for next-generation electronics, which could effectively suppress short-channel effects and consequently reduce static power consumption.
Yan Hu   +32 more
doaj   +2 more sources

A Tunable-Gain Transimpedance Amplifier for CMOS-MEMS Resonators Characterization

open access: yesMicromachines, 2021
CMOS-MEMS resonators have become a promising solution thanks to their miniaturization and on-chip integration capabilities. However, using a CMOS technology to fabricate microelectromechanical system (MEMS) devices limits the electromechanical ...
Rafel Perelló-Roig   +3 more
doaj   +1 more source

Study on CDM ESD Robustness Among On-Chip Decoupling Capacitors in CMOS Integrated Circuits

open access: yesIEEE Journal of the Electron Devices Society, 2021
The integrated circuit (IC) products fabricated in the scaled-down CMOS processes with higher clock rate and lower power supply voltage (VDD) are more sensitive to the transient/switching noises on the power lines with the parasitic inductance induced by
Yi-Chun Huang, Ming-Dou Ker
doaj   +1 more source

Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact

open access: yesIEEE Journal of the Electron Devices Society, 2023
In this study, we experimentally demonstrated concepts for realizing doping-free Tungsten Diselenide (WSe2) complementary metal-oxide-semiconductor (CMOS) inverter by developing alloys and compound metals used as source/drain (S/D) contacts.
Takamasa Kawanago   +8 more
doaj   +1 more source

Novel pure‐metal tri‐axis CMOS‐MEMS accelerometer design and implementation

open access: yesMicro & Nano Letters, 2021
This work proposed a pure‐metal, single‐proof‐mass structure fabricated by the standard 0.18 μm one‐poly‐silicon six‐metal (1P6M) CMOS process along with one in‐house post‐CMOS wet‐etching approach.
Jung‐Hung Wen, Weileum Fang
doaj   +1 more source

A 2.03-mW CMOS Image Sensor With an Integrated Four-Stacked Charge-Recycling Driver for Image Signal Transmission

open access: yesIEEE Access, 2022
We propose a CMOS image sensor with a dedicated low-power imaging mode and low-power integrated transmitter. The proposed CMOS image sensor selectively operates in dual mode: a high-quality mode with a 1.5 V supply voltage of readout circuits to achieve ...
Sang-Hoon Kim   +4 more
doaj   +1 more source

A Review on Passive and Integrated Near-Field Microwave Biosensors

open access: yesBiosensors, 2017
In this paper we review the advancement of passive and integrated microwave biosensors. The interaction of microwave with biological material is discussed in this paper.
Subhajit Guha   +2 more
doaj   +1 more source

Fabrication and Measurement of a Suspended Nanochannel Microbridge Resonator Monolithically Integrated with CMOS Readout Circuitry

open access: yesMicromachines, 2016
We present the fabrication and characterization of a suspended microbridge resonator with an embedded nanochannel. The suspended microbridge resonator is electrostatically actuated, capacitively sensed, and monolithically integrated with complementary ...
Gabriel Vidal-Álvarez   +3 more
doaj   +1 more source

Application of High-Frequency Leakage Current Model for Characterizing Failure Modes in Digital Logic Gates

open access: yesEnergies, 2021
In this paper, a predictive model is developed to characterize the impact of high-frequency electromagnetic interference (EMI) on the leakage current of CMOS integrated circuits.
Zahra Abedi   +4 more
doaj   +1 more source

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