CMOS Fabricated, Piezoelectrically Tunable Silicon Cavity Optomechanics
CLEO 2026We demonstrate a high-volume CMOS foundry fabricated, piezoelectrically actuated, slotted W1 photonic crystal cavity with optical resonance tuning of 3.87 THz using 40V bias, increasing the optomechanical coupling rate from 160 GHz/nm to 500 GHz/nm.
Johnathan T. Mack +7 more
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CMOS-Fabricated Piezo-Optomechanical Platform for Hyperfine Qubit Control
CLEO 2026We describe all-CMOS-fabricated, piezo-optomechanical, acousto-optic photonic integrated circuits that convert high-power continuous-wave visible laser light to gigahertz-frequency amplitude-modulated signals that can provide gate operations for trapped-atom and ion qubits.
Jacob M. Freedman +5 more
openaire +2 more sources
Frequency and Bandwidth Conversion with Integrated CMOS Fabricated Quantum Memory
CLEO 2026We propose using a CMOS fabricated Raman quantum memory of interstitial nitrogen defects in silicon nitride for single photon frequency and bandwidth conversion. We show visible to telecom conversion is possible by using integrated waveguides.
Kathleen Oolman +3 more
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Effects of COVID‐19 on a CMOS fabrication course: An integrated design experience [PDF]
Journal of the Society for Information Display, 2021 AbstractIn the CMOS fabrication course described herein, the lecture component provides the theoretical background for semiconductor materials and integrated circuit fabrication processes. The laboratory component provides the hands‐on experience required to fabricate and electrically characterize CMOS circuits in a one‐semester format.
Seung‐Joon Paik, A. Bruno Frazier
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An Extended CMOS ISFET Model Incorporating the Physical Design Geometry and the Effects on Performance and Offset Variation [PDF]
, 2011 17/04/13 meb. Accepted version OK to pub.This paper presents an extended model for the CMOS-based Ion-Sensitive-Field-Effect-Transistor (ISFET), incorporating design parameters associated with the physical geometry of the device.
Liu, Y +14 more
core +1 more source
Design of a single-chip pH sensor using a conventional 0.6-μm CMOS process [PDF]
, 2004 A pH sensor fabricated on a single chip by an unmodified, commercial 0.6-/spl μm CMOS process is presented. The sensor comprises a circuit for making differential measurements between an ion-sensitive field-effect transistor (ISFET) and a reference ...
Ali, D. +8 more
core +2 more sources
Integrated Inductors for RF Transmitters in CMOS/MEMS Smart Microsensor Systems
Sensors, 2007 This paper presents the integration of an inductor by complementary metal-oxide-semiconductor (CMOS) compatible processes for integrated smart microsensorsystems that have been developed to monitor the motion and vital signs of humans invarious ...
Makoto Ishida +3 more
doaj +1 more source
Design and Fabrication of Vertically-Integrated CMOS Image Sensors
Sensors, 2011 Technologies to fabricate integrated circuits (IC) with 3D structures are an emerging trend in IC design. They are based on vertical stacking of active components to form heterogeneous microsystems.
Orit Skorka, Dileepan Joseph
doaj +1 more source
Custom transistor layout design techniques for random telegraph signal noise reduction in CMOS image sensors [PDF]
, 2010 Interface and near oxide traps in small gate area MOS transistors (gate area ,1 mm2) lead to RTS noise which implies the emergence of noisy pixels in CMOS image sensors.
P. Magnan +5 more
core +1 more source
Implementation of a CMOS/MEMS Accelerometer with ASIC Processes
Micromachines, 2019 This paper presents the design, simulation and mechanical characterization of a newly proposed complementary metal-oxide semiconductor (CMOS)/micro-electromechanical system (MEMS) accelerometer. The monolithic CMOS/MEMS accelerometer was fabricated using
Yu-Sian Liu, Kuei-Ann Wen
doaj +1 more source