Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors [PDF]
, 2012 This paper presents an investigation of Total Ionizing Dose induced dark current sources in Pinned PhotoDiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed
Goiffon, Vincent +13 more
core +1 more source
Microsystems & Nanoengineering, 2023 Carbon nanotubes (CNTs) can be locally grown on custom-designed CMOS microheaters by a thermal chemical vapour deposition (CVD) process to utilize the sensing capabilities of CNTs in emerging micro- and nanotechnology applications. For such a direct CMOS-
Avisek Roy +3 more
doaj +1 more source
Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes [PDF]
, 2011 Selected radiation hardened photodiode layouts, manufactured in a deep submicron CMOS Image Sensor technology, are irradiated by 60Co gamma-rays up to 2.2 Mrad(SiO2) and studied in order to identify the most efficient structures and the guidelines ...
V. Goiffon +11 more
core +1 more source
Post-CMOS Fabrication of Working Electrodes for On-Chip Recordings of Transmitter Release [PDF]
IEEE Transactions on Biomedical Circuits and Systems, 2010 The release of neurotransmitters and hormones from secretory vesicles plays a fundamental role in the function of the nervous system including neuronal communication. High-throughput testing of drugs modulating transmitter release is becoming an increasingly important area in the fields of cell biology, neurobiology, and neurology.
Ayers, S. +4 more
openaire +4 more sources
Rad Tolerant CMOS Image Sensor Based on Hole Collection 4T Pixel Pinned Photodiode [PDF]
, 2012 1.4μm pixel pitch CMOS Image sensors based on hole collection pinned photodiode (HPD) have been irradiated with 60Co source. The HPD sensors exhibit much lower dark current degradation than equivalent commercial sensors using an Electron collection ...
Place, Sébastien +5 more
core +1 more source
A Low-Cost CMOS-MEMS Piezoresistive Accelerometer with Large Proof Mass
Sensors, 2011 This paper reports a low-cost, high-sensitivity CMOS-MEMS piezoresistive accelerometer with large proof mass. In the device fabricated using ON Semiconductor 0.5 μm CMOS technology, an inherent CMOS polysilicon thin film is utilized as the piezoresistive
Mohd Haris Md Khir, Hongwei Qu, Peng Qu
doaj +1 more source
Miniaturized Thermal Acoustic Gas Sensor Based on a CMOS Microhotplate and MEMS Microphone
Proceedings, 2020 In this work, we present a novel thermal acoustic gas sensor, fabricated using a CMOS microhotplate and MEMS microphone. The sensing mechanism is based on the detection of changes in the thermal acoustic conversion efficiency which is dependent on the ...
Richard Hopper +4 more
doaj +1 more source
Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors [PDF]
, 2012 This paper investigates the effects of displacement damage in Pinned Photodiode (PPD) CMOS Image Sensors (CIS) using proton and neutron irradiations. The DDD ranges from 12 TeV/g to ${1.2 times 10^{6}}$ TeV/g.
Bardoux, A. +9 more
core +1 more source
CMOS voltage-controlled oscillator with high-performance MEMS tunable inductor
Micro and Nano Systems Letters, 2021 LC CMOS voltage-controlled oscillators (VCOs) with tunable inductors are essential for high-performance, multi-band communication systems, such as IoT applications and 5G communication.
Uikyu Chae +4 more
doaj +1 more source
Similarities Between Proton and Neutron Induced Dark Current Distribution in CMOS Image Sensors [PDF]
, 2012 Several CMOS image sensors were exposed to neutron or proton beams (displacement damage dose range from 4 TeV/g to 1825 TeV/g) and their radiation-induced dark current distributions are compared.
Bardoux, A. +13 more
core +1 more source