Results 41 to 50 of about 418,483 (315)

Polarisation analysing complementary metal-oxide semiconductor image sensor in 65-nm standard CMOS technology

open access: yesThe Journal of Engineering, 2013
In the present study, the authors demonstrate a complementary metal-oxide semiconductor (CMOS) image sensor implemented with on-chip polarisers using 65-nm standard CMOS technology.
N. Wakama   +6 more
doaj   +1 more source

Radiation damages in CMOS image sensors: testing and hardening challenges brought by deep sub-micrometer CIS processes [PDF]

open access: yes, 2010
This paper presents a summary of the main results we observed after several years of study on irradiated custom imagers manufactured using 0,18 µm CMOS processes dedicated to imaging.
Goiffon, Vincent   +13 more
core   +1 more source

Radiation Effects in CMOS Isolation Oxides: Differences and Similarities With Thermal Oxides [PDF]

open access: yes, 2013
Radiation effects in thick isolation oxides of modern CMOS technologies are investigated using dedicated test structures designed using two commercial foundries.
Martinez, Martial   +11 more
core   +1 more source

A CMOS-Based Thermopile Array Fabricated on a Single SiO2 Membrane

open access: yesProceedings, 2018
We present a novel thermopile-based infrared (IR) sensor array fabricated on a single CMOS dielectric membrane, comprising of poly-silicon p+ and n+ elements.
Richard Hopper   +6 more
doaj   +1 more source

Custom transistor layout design techniques for random telegraph signal noise reduction in CMOS image sensors [PDF]

open access: yes, 2010
Interface and near oxide traps in small gate area MOS transistors (gate area ,1 mm2) lead to RTS noise which implies the emergence of noisy pixels in CMOS image sensors.
P. Magnan   +5 more
core   +1 more source

New 3-D CMOS Fabric With Stacked Horizontal Nanowires

open access: yesIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2019
As 2-D CMOS reaches its fundamental scaling limits due to device, manufacturing, and interconnect bottleneck related constraints at the nanoscale, migration to 3-D provides a possible alternative to continue technology scaling in future. Toward that goal, several 3-D integration approaches with multi-die, multichip, and sequential layers stacking are ...
Naveen Kumar Macha   +2 more
openaire   +1 more source

Heterogeneous Integration of Metal Oxides—Towards a CMOS Based Multi Gas Sensor Device

open access: yesProceedings, 2019
A worldwide unique CMOS based chemical sensor device comprising an array of 8 microhotplates (µhps) for a total of 16 chemical sensors has been fabricated (Figure 1). [...]
Anton Köck   +14 more
doaj   +1 more source

Design and Fabrication of CMOS Microstructures to Locally Synthesize Carbon Nanotubes for Gas Sensing

open access: yesSensors, 2019
Carbon nanotubes (CNTs) can be grown locally on custom-designed CMOS microstructures to use them as a sensing material for manufacturing low-cost gas sensors, where CMOS readout circuits are directly integrated.
Avisek Roy   +4 more
doaj   +1 more source

Space optical instruments optimisation thanks to CMOS image sensor technology [PDF]

open access: yes, 2005
Today, both CCD and CMOS sensors can be envisaged for nearly all visible sensors and instruments designed for space needs. Indeed, detectors built with both technologies allow excellent electro-optics performances to be reached, the selection of the most
Magali Estribeau   +15 more
core   +1 more source

CMOS Image Sensors for High Speed Applications

open access: yesSensors, 2009
Recent advances in deep submicron CMOS technologies and improved pixel designs have enabled CMOS-based imagers to surpass charge-coupled devices (CCD) imaging technology for mainstream applications.
M. Jamal Deen   +5 more
doaj   +1 more source

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