Results 41 to 50 of about 567,761 (300)
CMOS Image Sensors for High Speed Applications
Sensors, 2009 Recent advances in deep submicron CMOS technologies and improved pixel designs have enabled CMOS-based imagers to surpass charge-coupled devices (CCD) imaging technology for mainstream applications.
M. Jamal Deen +5 more
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MemCAM: A Hybrid Memristor-CMOS CAM Cell for On-Chip Caches
IEEE Access, 2021 Non-volatile nanoscale memory devices (such as memristors) have promised to overcome the challenges of scalability and leakage currents of CMOS based memory devices.
Zareen Sadiq, Shehzad Hasan
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3-D integration requirements for hybrid nanoscale-CMOS fabrics [PDF]
2011 11th IEEE International Conference on Nanotechnology, 2011 Several nanoscale-computing fabrics based on novel materials such as semiconductor nanowires, carbon nanotubes, graphene, etc. have been proposed in recent years. However, their integration and interfacing with external CMOS has received only limited attention.
Pavan Panchapakeshan +5 more
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Standard CMOS Process Integrated Silicon-Based Ultraviolet-Infrared Complementary Sensor
IEEE Photonics Journal, 2022 This study proposes a new ultraviolet-infrared (UV-Ir) compatible sensor fabricated using the standard CMOS process. The concept is verified through a numerical simulation, wherein the standard CMOS process parameters used are evaluated.
Takaya Sugiura +2 more
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New 3-D CMOS Fabric With Stacked Horizontal Nanowires
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2019 As 2-D CMOS reaches its fundamental scaling limits due to device, manufacturing, and interconnect bottleneck related constraints at the nanoscale, migration to 3-D provides a possible alternative to continue technology scaling in future. Toward that goal, several 3-D integration approaches with multi-die, multichip, and sequential layers stacking are ...
Naveen Kumar Macha +2 more
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Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
Advanced Functional Materials, EarlyView.This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
Space optical instruments optimisation thanks to CMOS image sensor technology [PDF]
, 2005 Today, both CCD and CMOS sensors can be envisaged for nearly all visible sensors and instruments designed for space needs. Indeed, detectors built with both technologies allow excellent electro-optics performances to be reached, the selection of the most
Magali Estribeau +15 more
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Advanced Functional Materials, EarlyView.Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang +11 more
wiley +1 more source