Results 41 to 50 of about 537,942 (300)

Standard CMOS Process Integrated Silicon-Based Ultraviolet-Infrared Complementary Sensor

IEEE Photonics Journal, 2022
This study proposes a new ultraviolet-infrared (UV-Ir) compatible sensor fabricated using the standard CMOS process. The concept is verified through a numerical simulation, wherein the standard CMOS process parameters used are evaluated.
Takaya Sugiura, Hiroki Miura, Nobuhiko Nakano   +2 more
doaj   +1 more source

3-D integration requirements for hybrid nanoscale-CMOS fabrics [PDF]

2011 11th IEEE International Conference on Nanotechnology, 2011
Several nanoscale-computing fabrics based on novel materials such as semiconductor nanowires, carbon nanotubes, graphene, etc. have been proposed in recent years. However, their integration and interfacing with external CMOS has received only limited attention.
Pavan Panchapakeshan, Priyamvada Vijayakumar, Pritish Narayanan, Chi On Chui, Israel Koren, Csaba Andras Moritz   +5 more
openaire   +1 more source

Space optical instruments optimisation thanks to CMOS image sensor technology [PDF]

, 2005
Today, both CCD and CMOS sensors can be envisaged for nearly all visible sensors and instruments designed for space needs. Indeed, detectors built with both technologies allow excellent electro-optics performances to be reached, the selection of the most
Magali Estribeau, Franck Corbiere, Estribeau, Magali, Tulet, Michel, Davancens, Robert, Olivier Saint-Pe, Robert Davancens, Franck Larnaudie, Pierre Magnan, Larnaudie, Franck, Corbière, Franck, Philippe Martin-Gonthier, Saint-Pé, Olivier, Michel Tulet, Magnan, Pierre, Martin-Gonthier, Philippe   +15 more
core   +1 more source

MemCAM: A Hybrid Memristor-CMOS CAM Cell for On-Chip Caches

IEEE Access, 2021
Non-volatile nanoscale memory devices (such as memristors) have promised to overcome the challenges of scalability and leakage currents of CMOS based memory devices.
Zareen Sadiq, Shehzad Hasan
doaj   +1 more source

Development of CMOS active pixel sensors [PDF]

, 2008
This thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel University.This thesis describes an investigation into the suitability of complementary metal oxide semiconductor (CMOS) active pixel sensor (APS) devices for ...
Greig, Thomas Alexander
core   +6 more sources

New 3-D CMOS Fabric With Stacked Horizontal Nanowires

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2019
As 2-D CMOS reaches its fundamental scaling limits due to device, manufacturing, and interconnect bottleneck related constraints at the nanoscale, migration to 3-D provides a possible alternative to continue technology scaling in future. Toward that goal, several 3-D integration approaches with multi-die, multichip, and sequential layers stacking are ...
Naveen Kumar Macha, Md Arif Iqbal, Mostafizur Rahman   +2 more
openaire   +2 more sources

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

High performances monolithic CMOS detectors for space applications [PDF]

, 2001
During the last 10 years, research about CMOS image sensors (also called APS -Active Pixel Sensors) has been intensively carried out, in order to offer an alternative to CCDs as image sensors.
Franck Corbiere, Jean A. Farre, Tulet, Michel, Davancens, Robert, Farre, Jean, Bruno Vignon, Olivier Saint-Pe, Robert Davancens, Franck Larnaudie, Pierre Magnan, Larnaudie, Franck, Corbière, Franck, Philippe Martin-Gonthier, Saint-Pé, Olivier, Michel Tulet, Vignon, Bruno, Magnan, Pierre, Martin-Gonthier, Philippe   +17 more
core   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source