Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors [PDF]
, 2012 This paper presents an investigation of Total Ionizing Dose induced dark current sources in Pinned PhotoDiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed
Goiffon, Vincent +13 more
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Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes [PDF]
, 2011 Selected radiation hardened photodiode layouts, manufactured in a deep submicron CMOS Image Sensor technology, are irradiated by 60Co gamma-rays up to 2.2 Mrad(SiO2) and studied in order to identify the most efficient structures and the guidelines ...
V. Goiffon +11 more
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Implementation of a CMOS/MEMS Accelerometer with ASIC Processes
Micromachines, 2019 This paper presents the design, simulation and mechanical characterization of a newly proposed complementary metal-oxide semiconductor (CMOS)/micro-electromechanical system (MEMS) accelerometer. The monolithic CMOS/MEMS accelerometer was fabricated using
Yu-Sian Liu, Kuei-Ann Wen
doaj +1 more source
Miniaturized Thermal Acoustic Gas Sensor Based on a CMOS Microhotplate and MEMS Microphone
Proceedings, 2020 In this work, we present a novel thermal acoustic gas sensor, fabricated using a CMOS microhotplate and MEMS microphone. The sensing mechanism is based on the detection of changes in the thermal acoustic conversion efficiency which is dependent on the ...
Richard Hopper +4 more
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CMOS voltage-controlled oscillator with high-performance MEMS tunable inductor
Micro and Nano Systems Letters, 2021 LC CMOS voltage-controlled oscillators (VCOs) with tunable inductors are essential for high-performance, multi-band communication systems, such as IoT applications and 5G communication.
Uikyu Chae +4 more
doaj +1 more source
Rad Tolerant CMOS Image Sensor Based on Hole Collection 4T Pixel Pinned Photodiode [PDF]
, 2012 1.4μm pixel pitch CMOS Image sensors based on hole collection pinned photodiode (HPD) have been irradiated with 60Co source. The HPD sensors exhibit much lower dark current degradation than equivalent commercial sensors using an Electron collection ...
Place, Sébastien +5 more
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3-D integration requirements for hybrid nanoscale-CMOS fabrics [PDF]
2011 11th IEEE International Conference on Nanotechnology, 2011 Several nanoscale-computing fabrics based on novel materials such as semiconductor nanowires, carbon nanotubes, graphene, etc. have been proposed in recent years. However, their integration and interfacing with external CMOS has received only limited attention.
Pavan Panchapakeshan +5 more
openaire +1 more source
Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors [PDF]
, 2012 This paper investigates the effects of displacement damage in Pinned Photodiode (PPD) CMOS Image Sensors (CIS) using proton and neutron irradiations. The DDD ranges from 12 TeV/g to ${1.2 times 10^{6}}$ TeV/g.
Bardoux, A. +9 more
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A Low-Cost CMOS-MEMS Piezoresistive Accelerometer with Large Proof Mass
Sensors, 2011 This paper reports a low-cost, high-sensitivity CMOS-MEMS piezoresistive accelerometer with large proof mass. In the device fabricated using ON Semiconductor 0.5 μm CMOS technology, an inherent CMOS polysilicon thin film is utilized as the piezoresistive
Mohd Haris Md Khir, Hongwei Qu, Peng Qu
doaj +1 more source
Similarities Between Proton and Neutron Induced Dark Current Distribution in CMOS Image Sensors [PDF]
, 2012 Several CMOS image sensors were exposed to neutron or proton beams (displacement damage dose range from 4 TeV/g to 1825 TeV/g) and their radiation-induced dark current distributions are compared.
Bardoux, A. +13 more
core +1 more source