Results 51 to 60 of about 537,942 (300)

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

Advanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

Advanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang, Dong Hyun Lee, Conan Weiland, Won‐Il Lee, Kim Kisslinger, Mingzhao Liu, Aswin kumar Anbalagan, Xiao Tong, Soumyajit Mandal, Nikhil Tiwale, Houk Jang, Chang‐Yong Nam   +11 more
wiley   +1 more source

SOI CMOS MEMS infra-red thermal source with carbon nanotubes coating [PDF]

, 2014
This abstract presents the development of a Silicon-on-Insulator (SOI) CMOS micro-electro-mechanical (MEMS) micro-hotplate based infra-red (IR) light source employing a vertically aligned multi-walled carbon nanotubes (VA- MWCNTs) emission layer.
Cole, M.T., De Luca, A, Cole, Matthew, Cole, Matthew T., Udrea, F., Ali, Syed Z., Hopper, R.H., Milne, W.I., Ali, S.Z., Milne, W I, Milne, W. I., De Luca, A., Gardner, J. W., Gardner, J.W., Ali, S. Z., Udrea, Florin, Hopper, R. H.   +16 more
core   +1 more source

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

Advanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee, Geunyoung Kim, Hwa Young Kim, Do Hoon Kim, Hanchan Song, Huisu Noh, Jungwan Noh, Seungwoo Lee, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +10 more
wiley   +1 more source

Compressively-strained, buried-channel $Si_{0.7}$Ge$_{0.3}$ p-MOSFETs fabricated on SiGe virtual substrates using a 0.25 µm CMOS process

, 2004
Enhanced performance is demonstrated from a buried, compressively strained-Si0.7Ge0.3 p-MOSFET fabricated on a relaxed Si0.85Ge0.15 using a high thermal budget 0.25 µm CMOS process.
Zhang, Jing, Cerrina, Claudia, Paul, Douglas J., Temple, Matthew P., Li, Xiabbing, Olsen, Sarah H., Tang, Yue T., Evans, Alan G.R., O’Neill, Anthony G., Waite, Andrew M.   +9 more
core   +1 more source

The future is frozen: cryogenic CMOS for high-performance computing

Chip
Low temperature complementary metal oxide semiconductor (CMOS) or cryogenic CMOS is a promising avenue for the continuation of Moore's law while serving the needs of high performance computing.
R. Saligram, A. Raychowdhury, Suman Datta   +2 more
doaj   +1 more source

Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Sensors, 2019
We developed silicon epitaxial wafers with high gettering capability by using hydrocarbon−molecular−ion implantation. These wafers also have the effect of hydrogen passivation on process-induced defects and a barrier to out-diffusion of ...
Kazunari Kurita, Takeshi Kadono, Satoshi Shigematsu, Ryo Hirose, Ryosuke Okuyama, Ayumi Onaka-Masada, Hidehiko Okuda, Yoshihiro Koga   +7 more
doaj   +1 more source

CMOS Depth Image Sensor with Offset Pixel Aperture Using a Back-Side Illumination Structure for Improving Disparity

Sensors, 2020
This paper presents a CMOS depth image sensor with offset pixel aperture (OPA) using a back-side illumination structure to improve disparity. The OPA method is an efficient way to obtain depth information with a single image sensor without additional ...
Jimin Lee, Sang-Hwan Kim, Hyeunwoo Kwen, Juneyoung Jang, Seunghyuk Chang, JongHo Park, Sang-Jin Lee, Jang-Kyoo Shin   +7 more
doaj   +1 more source

Functionalizing Micro‐to‐Mesoscopic Electrode Architectures for Regulating Electron Transfer Behaviors in Electrocatalysis

Advanced Functional Materials, EarlyView.
A systematic review is conducted to assess the influence of electrode architecture across micro‐ to mesoscopic length scales on electron‐transfer pathways in electrocatalysis. We discuss the structure‐activity relationships in electrocatalytic applications, including resource recovery and environmental remediation, and provide cost‐effective, efficient
Manshu Zhao, Jiaojiao Zhang, Shideng Yuan, Xinmeng Yu, Keming Wan, Xiaoguang Duan, Zhining Wang   +6 more
wiley   +1 more source