Results 71 to 80 of about 418,483 (315)
Advanced Functional Materials, EarlyView.Flexible piezoresistive pressure sensors underpin wearable and soft electronics. This review links sensing physics, including contact resistance modulation, quantum tunneling and percolation, to unified materials/structure design. We highlight composite and graded architectures, interfacial/porous engineering, and microstructured 3D conductive networks
Feng Luo +2 more
wiley +1 more source
Responsivity Enhanced NMOSFET Photodetector Fabricated by Standard CMOS Technology
Advances in Condensed Matter Physics, 2015 Increasing the responsivity is one of the important issues for a photodetector. In this paper, we demonstrate an improved NMOSFET photodetector by using deep-n-well (DNW) structure which can improve the responsivity of the photodetector significantly ...
Fuwei Wu, Xiaoli Ji, Feng Yan
doaj +1 more source
CMOS Cell Sensors for Point-of-Care Diagnostics
Sensors, 2012 The burden of health-care related services in a global era with continuously increasing population and inefficient dissipation of the resources requires effective solutions. From this perspective, point-of-care diagnostics is a demanded field in clinics.
Haluk Kulah, Yekbun Adiguzel
doaj +1 more source
Evaluation of rapid thermal processing systems for use in CMOS fabrication
Solid-State Electronics, 2002 Abstract The role of rapid thermal processes (RTP) is evolving to meet the demands of next generation complementary metal oxide semiconductors technology. The purpose of this paper is to describe three modern RTP systems and evaluate them in terms of their process capability on control wafers, throughput, and cost of ownership. Tool A is a RTP system
Department of Materials Science and Engineering, University of Florida, P.O. Box 116400 Rhines Hall, Gainesville, FL 32611-6400, USA ( host institution ) +2 more
openaire +2 more sources
Monolithic integration of InP nanowires with CMOS fabricated silicon nanotips wafer
Physical Review Materials, 2023 The integration of both optical and electronic components on a single chip, despite several challenges, holds the promise of compatibility with complementary metal-oxide semiconductor (CMOS) technology and high scalability. Among all candidate materials, III-V semiconductors exhibit great potential for optoelectronics and quantum-optics based devices ...
Anagha Kamath +14 more
openaire +2 more sources
A digital high-dynamic-range CMOS image sensor with multi-integration and pixel readout request [PDF]
, 2007 A novel principle has been developed to build an ultra wide dynamic range digital CMOS image sensor. Multiple integrations are used to achieve the required dynamic.
Segura, Josep +7 more
core +1 more source
Advanced Functional Materials, EarlyView.This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim +6 more
wiley +1 more source
AIP Advances, 2019 This work proposes and demonstrates the concept of a complementary metal-oxide-semiconductor (CMOS)-compatible electrophotonic monolithic refractive index sensor in which a Si-based light source is directly integrated.
A. A. González-Fernández +4 more
doaj +1 more source
Advanced Functional Materials, EarlyView.Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min +13 more
wiley +1 more source
IEEE Journal of the Electron Devices Society, 2019 We have developed a capacitor-less I&F neuron circuit with a dual gate positive feedback fieldeffect transistor (FBFET) and successfully co-integrated FBFET and CMOS in a wafer.
Min-Woo Kwon +4 more
doaj +1 more source