Results 61 to 70 of about 567,761 (300)
Development of CMOS active pixel sensors [PDF]
, 2008 This thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel University.This thesis describes an investigation into the suitability of complementary metal oxide semiconductor (CMOS) active pixel sensor (APS) devices for ...
Greig, Thomas Alexander
core +5 more sources
Compact modelling in RF CMOS technology [PDF]
, 2011 With the continuous downscaling of complementary metal-oxide-semiconductor (CMOS) technology, the RF performance of metal-oxide-semiconductor field transistors (MOSFETs) has considerably improved over the past years.
Liu, Jun
core +2 more sources
Ultrahigh-Q optomechanical crystal cavities fabricated in a CMOS foundry
Scientific Reports, 2017 Photonic crystals use periodic structures to create frequency regions where the optical wave propagation is forbidden, which allows the creation and integration of complex optical functionalities in small footprint devices.
Rodrigo Benevides +4 more
doaj +1 more source
Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology [PDF]
, 2009 An overview of ionizing radiation effects in imagers manufactured in a 0.18-μm CMOS image sensor technology is presented. Fourteen types of image sensors are characterized and irradiated by a 60Co source up to 5 kGy.
Goiffon, Vincent +5 more
core +1 more source
Advanced Functional Materials, EarlyView.Further advances in applications can be anticipated through the development of unique and functional materials beyond conventional alloys. Nitrogen enables tailor‐made orbital textures in various transition‐metal hosts, paving the way for devices ranging from spintronics memory to artificial intelligence hardware.
Prabhat Kumar +3 more
wiley +1 more source
A simple p-well CMOS fabrication process
, 2020 This research focused on the development of a p-well CMOS fabrication process that has fast turnaround time, is relatively inexpensive, and is easy to use. Most current CMOS fabrication processes use either n-well or twin-well techniques in order to provide better device isolation and improved circuit performance.
openaire +3 more sources
Advanced Functional Materials, EarlyView.This study reports a self‐powered InGaAs nanowire photodetector achieving single‐photon‐level sensitivity in the shortwave infrared at non‐cryogenic temperatures. The device demonstrates high‐speed imaging capabilities even under extremely low‐flux conditions.
Kosala Dhanawansha +10 more
wiley +1 more source
Responsivity Enhanced NMOSFET Photodetector Fabricated by Standard CMOS Technology
Advances in Condensed Matter Physics, 2015 Increasing the responsivity is one of the important issues for a photodetector. In this paper, we demonstrate an improved NMOSFET photodetector by using deep-n-well (DNW) structure which can improve the responsivity of the photodetector significantly ...
Fuwei Wu, Xiaoli Ji, Feng Yan
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2019 We have developed a capacitor-less I&F neuron circuit with a dual gate positive feedback fieldeffect transistor (FBFET) and successfully co-integrated FBFET and CMOS in a wafer.
Min-Woo Kwon +4 more
doaj +1 more source
Advanced Functional Materials, EarlyView.Neuromorphic plasticity in OECTs is governed by the post‐stimulus evolution of coupled ionic and electronic states. Semiconductor chemistry and morphology, electrolyte composition and interfaces, and device architecture regulate ion injection, transport, confinement, and release, shifting responses from rapidly relaxing STP to metastable memory and ...
Inho Lee +9 more
wiley +1 more source