Results 81 to 90 of about 537,942 (300)
Advanced Functional Materials, EarlyView.Resonant standing waves generate large‐area lattices of liquid‐crystal topological defects that are permanently encoded into polymer coatings by photopolymerization. The preserved director architecture produces thermally reconfigurable surface topographies while maintaining programmable optical functionality, demonstrating a scalable strategy for ...
Jacques A. Peixoto +6 more
wiley +1 more source
Overview of CMOS process and design options for image sensor dedicated to space applications [PDF]
, 2005 With the growth of huge volume markets (mobile phones, digital cameras…) CMOS technologies for image sensor improve significantly. New process flows appear in order to optimize some parameters such as quantum efficiency, dark current, and conversion gain.
Corbière, Franck +5 more
core +1 more source
Advanced Functional Materials, EarlyView.A gas‐fed, zero‐gap, PEM CO2 electrolyzer is realized by incorporating PDDA+ ions onto the carbonaceous Co/N‐C electrocatalyst, with gaseous H2 and CO2 fed into the anode and cathode, respectively. Operating without an aqueous electrolyte, the system sustains a peak FECO of 65.1% at 100 mA cm−2. ABSTRACT Electrochemical carbon dioxide reduction (ECO2R)
Yuen Leong Chow +6 more
wiley +1 more source
Architecture‐Driven Functional Coupling in Vertically Aligned Nanocomposites
Advanced Functional Materials, EarlyView.Vertically aligned nanocomposites define a growth‐engineered architecture in which vertical interfaces, strain fields, defect pathways, and phase connectivity are created simultaneously. This review shows how these architectural features couple ferroic, optical, ionic, electrochemical, and device responses, establishing design rules and open challenges
Md Shatil Islam‐Shanto +4 more
wiley +1 more source
A Fully Differential Digital CMOS Pulse UWB Generator [PDF]
, 2009 A new fully-digital CMOS pulse generator for impulse-radio Ultra-Wide-Band (UWB) systems is presented. First, the shape of the pulse which best fits the FCC regulation in the 3.1-5 GHz sub-band of the entire 3.1-10.6 GHz UWB bandwidth is derived and ...
Graziano, Mariagrazia +2 more
core +1 more source
Evaluation of rapid thermal processing systems for use in CMOS fabrication
Solid-State Electronics, 2002 Abstract The role of rapid thermal processes (RTP) is evolving to meet the demands of next generation complementary metal oxide semiconductors technology. The purpose of this paper is to describe three modern RTP systems and evaluate them in terms of their process capability on control wafers, throughput, and cost of ownership. Tool A is a RTP system
Department of Materials Science and Engineering, University of Florida, P.O. Box 116400 Rhines Hall, Gainesville, FL 32611-6400, USA ( host institution ) +2 more
openaire +2 more sources
Covalent Functionalization of 2D Semiconductors: A Roadmap to Advanced Electronic Devices
Advanced Functional Materials, EarlyView.This Review presents recent advances in the covalent functionalization strategies for two‐dimensional semiconductors and their implementation in modern technologies. Layered materials are modified through diverse molecular chemistries (e.g., thiols, diazonium salts, alkyl halides, and electron‐deficient species) to tailor their surface properties ...
Ramiro Quirós‐Ovies +2 more
wiley +1 more source
A digital high-dynamic-range CMOS image sensor with multi-integration and pixel readout request [PDF]
, 2007 A novel principle has been developed to build an ultra wide dynamic range digital CMOS image sensor. Multiple integrations are used to achieve the required dynamic.
Segura, Josep +7 more
core +1 more source
Defect Tolerance in Hybrid nano/CMOS Architecture using Tagging Mechanism [PDF]
, 2009 In this paper we propose two efficient repair techniques for hybrid nano/CMOS architecture to provide high level of defect tolerance at a modest cost.We have applied the proposed techniques to a lookup table(LUT) based Boolean logic approach.
Srivastava, Saket +5 more
core +2 more sources
A 0.8 V 0.23 nW 1.5 ns Full-Swing Pass-Transistor XOR Gate in 130 nm CMOS
Active and Passive Electronic Components, 2013 A power efficient circuit topology is proposed to implement a low-voltage CMOS 2-input pass-transistor XOR gate. This design aims to minimize power dissipation and reduce transistor count while at the same time reducing the propagation delay.
Nabihah Ahmad, Rezaul Hasan
doaj +1 more source