Results 91 to 100 of about 418,483 (315)
A fully programmable, dual‐inductive switchable halide perovskite memristor is demonstrated through precise BDAI2‐mediated interface engineering. This ion‐modulating layer suppresses stochastic filamentary growth, enabling stable, non‐filamentary switching via dynamic barrier modulation.
So‐Yeon Kim, Juan Bisquert
wiley +1 more source
Solution‐Processed Thin‐Film Transistors With Tunable Temporal Dynamics for Neuromorphic Computing
Solution‐processed CNT and CNT/P3HT ion‐gated transistors exhibit materials‐defined synaptic timescales: fast CNT devices for high‐frequency spiking and slow hybrid devices for temporal integration. Embedding these dynamics into coupled reservoir‐computing and spiking neural network simulations reveals that a Hybrid‐Reservoir / CNT‐SNN architecture ...
Kevin Schnittker +5 more
wiley +1 more source
A Fully Differential Digital CMOS Pulse UWB Generator [PDF]
A new fully-digital CMOS pulse generator for impulse-radio Ultra-Wide-Band (UWB) systems is presented. First, the shape of the pulse which best fits the FCC regulation in the 3.1-5 GHz sub-band of the entire 3.1-10.6 GHz UWB bandwidth is derived and ...
Graziano, Mariagrazia +2 more
core +1 more source
Thermally oxidized MoS2‐based radio‐frequency switches enable a multifunctional platform that unifies broadband RF switching and in‐memory computation. The device achieves a cutoff frequency of 33.2 THz with high energy efficiency and supports hardware‐aware signal processing.
Juho Son +5 more
wiley +1 more source
A 0.8 V 0.23 nW 1.5 ns Full-Swing Pass-Transistor XOR Gate in 130 nm CMOS
A power efficient circuit topology is proposed to implement a low-voltage CMOS 2-input pass-transistor XOR gate. This design aims to minimize power dissipation and reduce transistor count while at the same time reducing the propagation delay.
Nabihah Ahmad, Rezaul Hasan
doaj +1 more source
A reconfigurable RRAM platform utilizing thermally pre‐formed filaments (TPFs) is developed to realize robust hardware security. By exploiting the thermodynamic stochasticity of TPFs, exceptionally reliable physically unclonable functions (PUFs) are achieved.
Seongbin Kwon +4 more
wiley +1 more source
Enhanced performance is demonstrated from a buried, compressively strained-Si0.7Ge0.3 p-MOSFET fabricated on a relaxed Si0.85Ge0.15 using a high thermal budget 0.25 µm CMOS process.
Zhang, Jing +9 more
core
Compact modelling in RF CMOS technology [PDF]
With the continuous downscaling of complementary metal-oxide-semiconductor (CMOS) technology, the RF performance of metal-oxide-semiconductor field transistors (MOSFETs) has considerably improved over the past years.
Liu, Jun
core
Ambient temperature carbon nanotube ammonia sensor on CMOS platform [PDF]
We report here the development of a resistive single wall carbon nanotubes (SWCNTs) sensor, based on a CMOS substrate that responds at ambient temperature to ppm levels of ammonia.
Udrea, F. +21 more
core +1 more source
Chamber‐specific decellularized extracellular matrices (ECMs) were developed, preserving native proteomic profiles of ventricular and atrial myocardium. These innate biochemical cues differentially modulate cardiomyocyte subtypes to drive engineered heart tissue development and function, highlighting the importance of incorporating regional ECM cues in
Dong Gyu Hwang +7 more
wiley +1 more source

