Results 151 to 160 of about 23,841 (308)

Intracavity terahertz optical parametric oscillators [PDF]

, 2011
This thesis describes the design and implementation of several novel, nanosecond pulsed, intracavity optical parametric oscillators for the generation of terahertz radiation.
Walsh, David A.
core  

Engineering Large‐Grain Metal Halide Perovskite Films via Chemical Vapor Deposition for High‐Performance, Ultralow‐Noise Perovskite Photodetectors

Advanced Science, EarlyView.
Chemical vapor deposition produces large‐grain, phase‐pure CsPbBr3 films (grains up to 35 µm) with Drude‐like terahertz photoconductivity and twofold higher carrier mobility versus spin‐coated references. These microstructural advances translate into photodetectors with a detectivity of 8.4 × 1012 Jones, dark current below 1 pA cm−2, X‐ray sensitivity ...
Roel Vanden Brande, Sudipta Seth, Lei Gao, Bapi Pradhan, Dilkhush Khicher, Anastasiia Bazylevska, Wei Qu, Christian Sternemann, Hai Wang, Steven De Feyter, Weidong Xu, Fei Zhang, Mischa Bonn, Johan Hofkens, Elke Debroye   +14 more
wiley   +1 more source

Light‐Absorbing‐Layer‐Free Flash Lamp Annealing for High‐Throughput Fabrication of All‐Solution‐Processed Oxide Electronics

Advanced Science, EarlyView.
A flash lamp annealing strategy using a mullite chuck enables rapid conversion of sol–gels to metal oxides on silicon and ultra‐thin glass without extra light‐absorbing layers. Direct light absorption initiates the transformation, and the low thermal conductivity of mullite promotes heat accumulation.
Zetong Li, Wei He, Guangji Wang, Jingwei Zhang, Zhimin Chai, Xinchun Lu   +5 more
wiley   +1 more source

Integrated Optoelectronic Model to Predict the External Quantum Efficiency of Single‐Layer TADF Organic Light‐Emitting Diodes

Advanced Electronic Materials, EarlyView.
An experimentally validated optoelectronic device model is presented to describe the efficiency and roll‐off behavior of single‐layer TADF OLEDs. By coupling charge transport, exciton dynamics, and optical outcoupling, the model reproduces the External Quantum Efficiency (EQE) across different emission layer thicknesses and temperatures, offering ...
Jawid Nikan, Kaiwen Guo, Yungui Li, Paul W. M. Blom, Gert‐Jan A. H. Wetzelaer   +4 more
wiley   +1 more source

Multi‐Vth IGZO FETs Enabled by Continuous‐wave Laser Scanning Annealing for Low Thermal Budget 3D Integration

Advanced Electronic Materials, EarlyView.
A novel strategy is used to fabricate multi‐threshold‐voltage (multi‐Vth) IGZO FETs via continuous‐wave laser scanning annealing (CW‐LSA). By tuning the laser power and scan speed, low, standard, and high Vth values of 0.22, 0.42, and 0.62 V, respectively, were achieved on a single wafer with excellent uniformity (coefficient of variation: 2.17%–6.61%).
Jun‐Hyeok Choi, Kiyung Kim, Hyeon‐Seok Shin, Uigwan Shin, Byeong Gwan Kim, Jae Hyeon Jun, Joon Kim, Yoonyoung Chung, Byoung Hun Lee   +8 more
wiley   +1 more source

35 kW peak power picosecond pulsed thulium-doped fibre amplifier system seeded by a gain-switched laser diode at 2 microns [PDF]

High power fibre laser sources in the 2 µm wavelength region with picosecond-scale pulse durations have attractive applications such as materials processing, eye-safe radar and nonlinear frequency conversion to midinfrared wavelengths.
Heidt, A.M., Kelly, B., Ibsen, M., Li, Z., Richardson, D.J., Rothhardt, M., Phelan, R., Sahu, J.K., Shardlow, P.C., Becker, M., Alam, S.-U.   +10 more
core  

Improvement of mechanical properties of Nb on Cu structure for RF cavity by laser radiation: Formation of soft Cu buffer layer

Results in Surfaces and Interfaces
An increase in the crystal size of Nb thin films and the Cu substrate in the Nb/Cu structure was observed after irradiation with an Nd:YAG laser, as confirmed by XRD, SEM, and EDS measurements.
A. Medvids, A. Mychko, J. Kaupuzs, M. Bleija, A. Zunda, J. Padgurskas, R. Valizadeh, O.B. Malyshev   +7 more
doaj   +1 more source

Influence of Top Electrode Metal on Resistive Switching in Multilayer MOCVD MoS2 Memristors

Advanced Electronic Materials, EarlyView.
MoS2 memristors typically use evaporated noble metal electrodes. This study compares Pd, Ni, and Al electrodes and sputtered versus evaporated deposition. Pd is passive, while Ni damages MoS2, yielding poor switching. Sputtered Al enables reproducible ECM‐type switching with 95% yield, whereas evaporated Al forms an interfacial oxide that suppresses ...
Dennis Braun, Jing Liu, Vasilis A. Maroufidis, Hleb Fiadziushkin, Lukas Völkel, Jimin Lee, Sofía Cruces, Annika Grundmann, Ke Ran, Thorsten Wahlbrink, Holger Kalisch, Andrei Vescan, Joachim Mayer, Michael Heuken, Alwin Daus, Max C. Lemme   +15 more
wiley   +1 more source

ZnO Nanowires for Ultraviolet Detection: Recent Developments, Challenges, and Future Outlook

Advanced Electronic Materials, EarlyView.
This work provides a comprehensive review of Zinc Oxide (ZnO) nanowires for high‐performance ultraviolet (UV) photodetection. By analyzing unique device physics and various detector architectures, it unveils strategies to overcome current performance limitations regarding speed and sensitivity.
Ala K. Jehad, Salih Alper Akalin, Mustafa Erol, Yavuz Ozturk, Metin Yurddaskal   +4 more
wiley   +1 more source

Atomic Scale Control of Thermal Conductivity in LaMnO3/SrMnO3 Superlattices

Advanced Electronic Materials, EarlyView.
Interface‐dominated cross‐plane thermal transport in [(LaMnO3)m/(SrMnO3)n]10 superlattices can be controlled by the octahedral rotation/tilt angle φOOR of the MnO6 octahedra, which as well is controlled by the “m/n” ratio. ABSTRACT We report atomic scale structure and phonon thermal transport in (LaMnO3)m/(SrMnO3)n/SrTiO3(100) superlattices (LMO/SMO ...
H. Ulrichs, V. Roddatis, U. Roß, J. P. Bange, D. Meyer, S. Lopatin, V. Radisch, D. Metternich, I. V. Maznichenko, S. Ostanin, R. Egoavil, I. Lazić, V. Moshnyaga   +12 more
wiley   +1 more source