Results 1 to 10 of about 45,518 (285)

Recent advances in the development of nanosheet zeolites as heterogeneous catalysts

open access: yesResults in Engineering, 2023
Recently, zeolites with two-dimensional structures, so-called nanosheet zeolites, have been intensively advanced owing to their excellent catalytic performance compared to conventional zeolite.
Grandprix T.M. Kadja   +4 more
doaj   +1 more source

Effect of Graphene Oxide Nanosheets on Physical Properties of Ultra-High-Performance Concrete with High Volume Supplementary Cementitious Materials [PDF]

open access: yes, 2020
Nanomaterials have been increasingly employed for improving the mechanical properties and durability of ultra-high-performance concrete (UHPC) with high volume supplementary cementitious materials (SCMs).
Lambert, Paul   +4 more
core   +1 more source

Steam-Induced Coarsening of Single-Unit-Cell MFI Zeolite Nanosheets and Its Effect on External Surface Brønsted Acid Catalysis. [PDF]

open access: yes, 2020
Commonly used methods to assess crystallinity, micro-/mesoporosity, Brønsted acid site density and distribution (in micro- vs. mesopores), and catalytic activity suggest nearly invariant structure and function for aluminosilicate zeolite MFI two ...
Abdelrahman, Omar A   +11 more
core   +2 more sources

Layer-by-layer polypyrrole coated graphite oxide and graphene nanosheets as catalyst support materials for fuel cells [PDF]

open access: yes, 2011
For the production of advanced type of catalyst support materials, the distinguished properties of graphene nanosheets were combined with the structural properties of conducting polypyrrole by the incorporation of graphene nanosheets into a polymer ...
Alkan Gursel, Selmiye   +4 more
core   +4 more sources

Large‐Scale Ultrathin Channel Nanosheet‐Stacked CFET Based on CVD 1L MoS2/WSe2

open access: yesAdvanced Electronic Materials, 2023
Nanosheet (NS) vertical‐stacked complementary field‐effect transistors (CFETs), where the NS n‐FET and NS p‐FET are vertically stacked and controlled using a common gate, would result in maximum device footprint reduction.
Menggan Liu   +8 more
doaj   +1 more source

The Impact of Ambient Temperature on Electrothermal Characteristics in Stacked Nanosheet Transistors with Multiple Lateral Stacks

open access: yesNanomaterials, 2023
With characteristic size scaling down to the nanoscale range, the confined geometry exacerbates the self-heating effect (SHE) in nanoscale devices. In this paper, the impact of ambient temperature (Tamb) on the SHE in stacked nanosheet transistors is ...
Peng Zhao   +4 more
doaj   +1 more source

A Novel Sub-5-nm Node Dual-Workfunction Folded Cascode Nanosheet FETs for Low Power Mobile Applications

open access: yesIEEE Access, 2020
A novel sub-5-nm node folded cascode structure using dual workfunction (WF) scheme was proposed using fully-calibrated TCAD. Feasible process flows of the cascode device were adopted from those of nanosheet FETs (NSFETs) and complementary FETs.
Jun-Sik Yoon, Rock-Hyun Baek
doaj   +1 more source

Supercapacitor Performance of Nickel-Cobalt Sulfide Nanotubes Decorated Using Ni Co-Layered Double Hydroxide Nanosheets Grown in Situ on Ni Foam [PDF]

open access: yes, 2020
In this study, to fabricate a non-binder electrode, we grew nickel-cobalt sulfide (NCS) nanotubes (NTs) on a Ni foam substrate using a hydrothermal method through a two-step approach, namely in situ growth and an anion-exchange reaction.
Ang, Li   +8 more
core   +1 more source

Fabrication of Cobalt-Nickel-Zinc Ternary Oxide Nanosheet and Applications for Supercapacitor Electrode

open access: yesFrontiers in Chemistry, 2018
Mesoporous cobalt-nickel-zinc ternary oxide (CNZO) nanosheets grown on the nickel foam are prepared by a simple hydrothermal treatment and subsequent calcination process.
Chun Wu   +5 more
doaj   +1 more source

A Benchmark Study of Complementary-Field Effect Transistor (CFET) Process Integration Options Done by Virtual Fabrication

open access: yesIEEE Journal of the Electron Devices Society, 2020
Four process flow options for Complementary-Field Effect Transistors (C-FET), using different designs and starting substrates (Si bulk, Silicon-On-Insulator, or Double-SOI), were compared to assess the probability of process variation failures. The study
B. Vincent   +3 more
doaj   +1 more source

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