Results 221 to 230 of about 32,517 (238)
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Nano Letters, 2008
Metallic glass nanowires were spontaneously created on the fracture surfaces that were produced by a conventional mechanical test. The presence of the nanowires is directly related to the one-dimensional meniscus configuration with a small viscosity at high temperatures and to the wide supercooled liquid region of the metallic glass.
Koji S, Nakayama +6 more
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Metallic glass nanowires were spontaneously created on the fracture surfaces that were produced by a conventional mechanical test. The presence of the nanowires is directly related to the one-dimensional meniscus configuration with a small viscosity at high temperatures and to the wide supercooled liquid region of the metallic glass.
Koji S, Nakayama +6 more
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physica status solidi (b), 2011
AbstractDifferent strategies for obtaining nanowires (NWs) with ferromagnetic properties using the molecular beam epitaxy (MBE) grown nanostructures combining GaAs and Mn were investigated. Four types of structures have been studied: (i) self‐catalyzed GaAs:Mn NWs grown at low temperatures on GaAs(100) substrates; (ii) GaAs:Mn NWs grown at high ...
J. Sadowski +7 more
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AbstractDifferent strategies for obtaining nanowires (NWs) with ferromagnetic properties using the molecular beam epitaxy (MBE) grown nanostructures combining GaAs and Mn were investigated. Four types of structures have been studied: (i) self‐catalyzed GaAs:Mn NWs grown at low temperatures on GaAs(100) substrates; (ii) GaAs:Mn NWs grown at high ...
J. Sadowski +7 more
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Journal of the American Chemical Society, 2009
The structural, electronic, and magnetic properties of double metallocene nanowires PnM(2) (Pn = C(8)H(6), M = V, Cr, Mn, Co, and Ni) are investigated within the framework of gradient-corrected density functional theory. The PnMn(2) nanowire is predicted to be ferromagnetic while other nanowires are either antiferromagnitic or nonmagnetic. In addition,
Xiaojun, Wu, Xiao Cheng, Zeng
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The structural, electronic, and magnetic properties of double metallocene nanowires PnM(2) (Pn = C(8)H(6), M = V, Cr, Mn, Co, and Ni) are investigated within the framework of gradient-corrected density functional theory. The PnMn(2) nanowire is predicted to be ferromagnetic while other nanowires are either antiferromagnitic or nonmagnetic. In addition,
Xiaojun, Wu, Xiao Cheng, Zeng
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Nanowire-based thermoelectrics
Nanotechnology, 2017Research on thermoelectrics has seen a huge resurgence since the early 1990s. The ability of tuning a material's electrical and thermal transport behavior upon nanostructuring has led to this revival. Nevertheless, thermoelectric performances of nanowires and related materials lag far behind those achieved with thin-film superlattices and quantum dot ...
Azhar, Ali +3 more
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Journal of the American Chemical Society, 2002
Ideal nanowire interconnects for nanoelectronics will be refractory, covalently bonded, and highly conductive, irrespective of crystallographic orientation. Theoretical studies suggest that boron nanotubes should be stable and exhibit higher electrical conductivities than those of carbon nanotubes.
Otten, CJ +6 more
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Ideal nanowire interconnects for nanoelectronics will be refractory, covalently bonded, and highly conductive, irrespective of crystallographic orientation. Theoretical studies suggest that boron nanotubes should be stable and exhibit higher electrical conductivities than those of carbon nanotubes.
Otten, CJ +6 more
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The Journal of Physical Chemistry B, 2004
ZnO nanowire field-effect transistors (FETs) were fabricated and studied in vacuum and a variety of ambient gases from 5 to 300 K. In air, these n-type nanowire transistors have among the highest mobilities yet reported for ZnO FETs (mu(e) = 13 +/- 5 cm(2) V(-1) s(-1)), with carrier concentrations averaging 5.2 +/- 2.5 x 10(17) cm(-3) and on-off ...
Josh, Goldberger +3 more
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ZnO nanowire field-effect transistors (FETs) were fabricated and studied in vacuum and a variety of ambient gases from 5 to 300 K. In air, these n-type nanowire transistors have among the highest mobilities yet reported for ZnO FETs (mu(e) = 13 +/- 5 cm(2) V(-1) s(-1)), with carrier concentrations averaging 5.2 +/- 2.5 x 10(17) cm(-3) and on-off ...
Josh, Goldberger +3 more
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Nanoscale, 2011
The pathway towards the realization of optical solid-state lasers was gradual and slow. After Einstein's paper on absorption and stimulated emission of light in 1917 it took until 1960 for the first solid state laser device to see the light. Not much later, the first semiconductor laser was demonstrated and lasing in the near UV spectral range from ZnO
Vanmaekelbergh, D.A.M., van Vugt, L.K.
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The pathway towards the realization of optical solid-state lasers was gradual and slow. After Einstein's paper on absorption and stimulated emission of light in 1917 it took until 1960 for the first solid state laser device to see the light. Not much later, the first semiconductor laser was demonstrated and lasing in the near UV spectral range from ZnO
Vanmaekelbergh, D.A.M., van Vugt, L.K.
openaire +3 more sources