Results 231 to 240 of about 139,620 (289)

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

Junctionless Silicon Nanowire Transistors without the Use of Impurity Doping. [PDF]

ACS Nano
Nagarajan S, König D, Ratschinski I, Galderisi G, Shams S, Mikolajick T, Hiller D, Trommer J.   +7 more
europepmc   +1 more source

Topological Materials and Related Applications

Advanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source

Bifunctional V-doped NiCoP nanowires for high-efficiency electrolysis. [PDF]

RSC Adv
Tong Y, Zhao X, Dong Y, Wang E.
europepmc   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Sulphur-promoted growth of Mo₆S₂I₈ nanowires <i>via</i> a metastable MoI_2-<i>x</i> S _<i>x</i> intermediate. [PDF]

Nanoscale Adv
Pogačnik Krajnc A, Jelenc J, Pirker L, Škapin SD, Remškar M.   +4 more
europepmc   +1 more source

From Field Effect Transistors to Spin Qubits: Focus on Group IV Materials, Architectures and Fabrications. [PDF]

Nanomaterials (Basel)
Petkov N, Fagas G.
europepmc   +1 more source

Sources of non-Arrhenius electron transport in bacterial nanowires.

Phys Chem Chem Phys
Terai K, Zhang P, Beratan DN.
europepmc   +1 more source

Predictive Wafer-Scale Copper Nanowire Fabrication Using Template-Assisted On-Substrate Electrodeposition. [PDF]

Langmuir
Vergin M, Schöttler G, Waag A, Meierhofer F.   +3 more
europepmc   +1 more source

Mechanically strong and highly conductive graphitized carbon nanowire arrays for nano-fabrication of carbon-based chips. [PDF]

Microsyst Nanoeng
Deng J, Liu C, Chen X, Madou M.
europepmc   +1 more source