k.p theory of freestanding narrow band gap semiconductor nanowires
AIP Advances, 2016 We report on a theoretical study of the electronic structures of freestanding nanowires made from narrow band gap semiconductors GaSb, InSb and InAs. The nanowires are described by the eight-band k.p Hamiltonians and the band structures are computed by ...
Ning Luo, Gaohua Liao, H. Q. Xu
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Mechanism for the Formation of Cuprous Oxide Nanowires in AAO template by Electrodeposition
International Journal of Electrochemical Science, 2017 The effect of potential and pH on the formation of Cu2O and Cu nanowires in AAO template have systematically been studied by Potentiostate, XRD, SEM, TEM and EDX. The pure Cu2O nanowires were electrodeposited at voltage (−0.3 V) and pH (8.2).
Babar Shazad Khan +4 more
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Synthesis of large-area and aligned copper oxide nanowires from copper thin film on silicon substrate [PDF]
, 2007 Large-area and aligned copper oxide nanowires have been synthesized by thermal annealing of copper thin films deposited onto silicon substrate. The effects of the film deposition method, annealing temperature, film thickness, annealing gas, and ...
Alphonse, Pierre +4 more
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Synthesis of AlN Nanowires by Al-Sn Flux Method
Crystals, 2022 This paper presents a recent study on the synthesis of AlN nanowires. AlN nanowires were successfully prepared on sapphire substrate by the Al-Sn flux method.
Haoxin Mu +7 more
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High density p-type Bi0.5Sb1.5Te3 nanowires by electrochemical templating through ion-track lithography [PDF]
, 2009 High density p-type Bi0.5Sb1.5Te3 nanowire arrays are produced by a combination of electrodeposition and ion-track lithography technology. Initially, the electrodeposition of p-type wBi(0.5)Sb(1.5)Te(3) films is investigated to find out the optimal ...
Beeby, Steve P. +5 more
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Different III-V semiconductor nanowires with quantum dots on silicon: growth by molecular-beam epitaxy and properties [PDF]
Научно-технический вестник информационных технологий, механики и оптики, 2021 Recently, III-V semiconductor nanostructures of reduced dimension attract more and more interest of researchers for the new generation devices creation.
Rodion R. Reznik +5 more
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Surface Modification and Damage of MeV-Energy Heavy Ion Irradiation on Gold Nanowires
Nanomaterials, 2017 Gold nanowires with diameters ranging from 20 to 90 nm were fabricated by the electrochemical deposition technique in etched ion track polycarbonate templates and were then irradiated by Xe and Kr ions with the energy in MeV range.
Yaxiong Cheng +10 more
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Structural and electrical properties of gold nanowires/P(VDF-TrFE) nanocomposites [PDF]
, 2010 High aspect ratio gold nanowires were uniformly dispersed into a poly(vinylidene difluoride–trifluoroethylene) [P(VDF-TrFE)] matrix. The nanowires were synthesized by electrodeposition using nanoporous anodic alumina oxide templates.
Dantras, Eric +4 more
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Directed deposition of silicon nanowires using neopentasilane as precursor and gold as catalyst [PDF]
, 2012 In this work the applicability of neopentasilane (Si(SiH3)4) as a precursor for the formation of silicon nanowires by using gold nanoparticles as a catalyst has been explored.
Auner, Norbert +6 more
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Functional Devices from Bottom-Up Silicon Nanowires: A Review
Nanomaterials, 2022 This paper summarizes some of the essential aspects for the fabrication of functional devices from bottom-up silicon nanowires. In a first part, the different ways of exploiting nanowires in functional devices, from single nanowires to large assemblies ...
Tabassom Arjmand +7 more
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