Results 31 to 40 of about 108,505 (297)
Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy [PDF]
We report the self-catalysed growth of InAs nanowires (NWs) on graphite thin films using molecular beam epitaxy via a droplet-assisted technique. Through optimising metal droplets, we obtained vertically aligned InAs NWs with highly uniform diameter ...
Anyebe, Ezekiel A. +33 more
core +1 more source
Abstract: We review principles and trends in the use of semiconductor nanowires as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as light‐emitting diodes (LEDs), solar cells, and transistors.
Couteau, Christophe +3 more
openaire +5 more sources
Surface functionalization of III-V Nanowires
The physical and chemical properties of semiconductor nanowires are significantly influenced by their surface structure and morphology. This can be understood in that surfaces make out a much larger part of the total structure as compared to macroscale ...
Timm, Rainer, +2 more
core +1 more source
Synthesis and Magnetic Properties of NiCo Nanowire Array by Potentiostatic Electrodeposition
NiCo alloy nanowires have been fabricated by electrodeposition using anodized aluminum oxide templates. Growth of nanowires consists of four different stages namely nucleation, steady state growth, filling of pores, and coverage of filled nanowires on ...
Ying Cao +3 more
doaj +1 more source
Functional Devices from Bottom-Up Silicon Nanowires: A Review
This paper summarizes some of the essential aspects for the fabrication of functional devices from bottom-up silicon nanowires. In a first part, the different ways of exploiting nanowires in functional devices, from single nanowires to large assemblies ...
Tabassom Arjmand +7 more
doaj +1 more source
Do Twin Boundaries Always Strengthen Metal Nanowires?
It has been widely reported that twin boundaries strengthen nanowires regardless of their morphology—that is, the strength of nanowires goes up as twin spacing goes down.
Zhang Yongfeng, Huang Hanchen
doaj +1 more source
Vertical-aligned CuO nanowires have been directly fabricated on Cu foil through a facile thermal oxidation process by a hotplate at 550 °C for 6 h under ambient conditions.
Tung-Hao Chang +3 more
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Mechanism of vertical Ge nanowire nucleation on Si (111) during subeutectic annealing and growth [PDF]
The direct integration of Ge nanowires with silicon is of interest in multiple applications. In this work, we describe the growth of high-quality, vertically oriented Ge nanowires on Si (111) substrates utilizing a completely sub-Au-Si-eutectic annealing
Chung, Sung Hwan +13 more
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Polarizable Vanadium Dipoles Promote Water Dissociation on Vanadium‐Based Metal Organic Framework
The polarization of unpaired V 3d electrons weakens the H─O bond to improve water dissociation by the dual Vδ+:O─H and Pλ−:H─O coupling hydrogen bonds formation and relaxation. P@V‐MOF electrocatalyst shows low overpotentials (94 mV in acid, 178 mV in neutral, and 77 mV in alkaline solutions) with excellent stability for effective overall water ...
Xinjuan Liu +13 more
wiley +1 more source
Semi-conductive silicon carbide (SiC) nanowires were amino-functionalized to achieve better dispersion in poly(vinylidene fluoride) (PVDF) matrix. It was found that PVDF based composites with amino-functionalized SiC (f-SiC) nanowires exhibited lower ...
B. Wang +9 more
doaj +1 more source

