Results 21 to 30 of about 183,201 (291)

k.p theory of freestanding narrow band gap semiconductor nanowires

open access: yesAIP Advances, 2016
We report on a theoretical study of the electronic structures of freestanding nanowires made from narrow band gap semiconductors GaSb, InSb and InAs. The nanowires are described by the eight-band k.p Hamiltonians and the band structures are computed by ...
Ning Luo, Gaohua Liao, H. Q. Xu
doaj   +1 more source

Mechanism for the Formation of Cuprous Oxide Nanowires in AAO template by Electrodeposition

open access: yesInternational Journal of Electrochemical Science, 2017
The effect of potential and pH on the formation of Cu2O and Cu nanowires in AAO template have systematically been studied by Potentiostate, XRD, SEM, TEM and EDX. The pure Cu2O nanowires were electrodeposited at voltage (−0.3 V) and pH (8.2).
Babar Shazad Khan   +4 more
doaj   +1 more source

Synthesis of large-area and aligned copper oxide nanowires from copper thin film on silicon substrate [PDF]

open access: yes, 2007
Large-area and aligned copper oxide nanowires have been synthesized by thermal annealing of copper thin films deposited onto silicon substrate. The effects of the film deposition method, annealing temperature, film thickness, annealing gas, and ...
Alphonse, Pierre   +4 more
core   +3 more sources

Surface Modification and Damage of MeV-Energy Heavy Ion Irradiation on Gold Nanowires

open access: yesNanomaterials, 2017
Gold nanowires with diameters ranging from 20 to 90 nm were fabricated by the electrochemical deposition technique in etched ion track polycarbonate templates and were then irradiated by Xe and Kr ions with the energy in MeV range.
Yaxiong Cheng   +10 more
doaj   +1 more source

Different III-V semiconductor nanowires with quantum dots on silicon: growth by molecular-beam epitaxy and properties [PDF]

open access: yesНаучно-технический вестник информационных технологий, механики и оптики, 2021
Recently, III-V semiconductor nanostructures of reduced dimension attract more and more interest of researchers for the new generation devices creation.
Rodion R. Reznik   +5 more
doaj   +1 more source

Electronic shell effects and the stability of alkali nanowires [PDF]

open access: yes, 2004
Experimental conductance histograms for Na nanowires are analyzed in detail and compared to recent theoretical results on the stability of cylindrical and elliptical nanowires, using the free-electron model.
A.I. Yanson   +44 more
core   +2 more sources

High density p-type Bi0.5Sb1.5Te3 nanowires by electrochemical templating through ion-track lithography [PDF]

open access: yes, 2009
High density p-type Bi0.5Sb1.5Te3 nanowire arrays are produced by a combination of electrodeposition and ion-track lithography technology. Initially, the electrodeposition of p-type wBi(0.5)Sb(1.5)Te(3) films is investigated to find out the optimal ...
Beeby, Steve P.   +5 more
core   +1 more source

Synthesis and Magnetic Properties of NiCo Nanowire Array by Potentiostatic Electrodeposition

open access: yesInternational Journal of Electrochemical Science, 2014
NiCo alloy nanowires have been fabricated by electrodeposition using anodized aluminum oxide templates. Growth of nanowires consists of four different stages namely nucleation, steady state growth, filling of pores, and coverage of filled nanowires on ...
Ying Cao   +3 more
doaj   +1 more source

Functional Devices from Bottom-Up Silicon Nanowires: A Review

open access: yesNanomaterials, 2022
This paper summarizes some of the essential aspects for the fabrication of functional devices from bottom-up silicon nanowires. In a first part, the different ways of exploiting nanowires in functional devices, from single nanowires to large assemblies ...
Tabassom Arjmand   +7 more
doaj   +1 more source

Electronic structures of free-standing nanowires made from indirect bandgap semiconductor gallium phosphide

open access: yes, 2016
We present a theoretical study of the electronic structures of freestanding nanowires made from gallium phosphide (GaP)--a III-V semiconductor with an indirect bulk bandgap.
A Standing   +36 more
core   +1 more source

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