Plasmonic-tape-attached multilayered MoS2 film for near-infrared photodetection [PDF]
Scientific Reports, 2020 Molybdenum disulfide has been intensively studied as a promising material for photodetector applications because of its excellent electrical and optical properties.
Minji Park, Gumin Kang, Hyungduk Ko
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Black silicon for near-infrared and ultraviolet photodetection: A review
APL Materials, 2023 As a typical representative of micro/nano-textured silicon, black silicon has excellent light absorption properties and is gradually surfacing as a substitute for standard silicon in photoelectric devices.
Zhou Zhao +9 more
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Band Tailoring Enabled Perovskite Devices for X‐Ray to Near‐Infrared Photodetection [PDF]
Advanced SciencePerovskite semiconductors have shown significant promise for photodetection due to their low effective carrier masses and long carrier lifetimes. However, achieving balanced detection across a broad spectrum—from X‐rays to infrared—within a single ...
Yi‐Chu He +14 more
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Mixed-Dimensional Nanowires/Nanosheet Heterojunction of GaSb/Bi2O2Se for Self-Powered Near-Infrared Photodetection and Photocommunication [PDF]
Nano-Micro LettersHighlights The mixed-dimensional type II heterojunction of GaSb nanowires (NWs) and Bi2O2Se nanosheets (NSs) with a built-in electric field of ~ 140 meV is successfully constructed.
Guangcan Wang +8 more
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Small ScienceThis study presents the polarization photodetection enhancement in Sb2Se3 nanotube (NT)‐based near‐infrared (NIR) photodetectors through simulation‐based and experimental investigations. High‐quality single‐crystal Sb2Se3 NTs are grown via chemical vapor
Songqing Zhang +11 more
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Thiol-Amine Processed PbS Thin Films for Enhanced Near-Infrared Photodetection [PDF]
NanomaterialsDeveloping reliable processing routes for semiconductor thin films is essential for advancing photodetection technologies. The amine-thiol solvent system, in comparison with other liquid-phase synthesis methods, does not necessitate stepwise ion-exchange
Yuanze Hong, Zhipeng Wei, Xiaohua Wang
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Dielectric engineered graphene transistors for high-performance near-infrared photodetection [PDF]
iScienceSummary: Graphene, known for its ultrahigh carrier mobility and broadband optical absorption, holds significant potential in optoelectronics. However, the carrier mobility of graphene on silicon substrates experienced a marked decrease due to surface ...
Weijian Zhou +4 more
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Erratum: Dielectric engineered graphene transistors for high-performance near-infrared photodetection. [PDF]
iScienceGraphene, known for its ultrahigh carrier mobility and broadband optical absorption, holds significant potential in optoelectronics. However, the carrier mobility of graphene on silicon substrates experienced a marked decrease due to surface roughness, phonon scattering affects.
Zhou W, Ma T, Tian Y, Jiang Y, Yu X.
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Silicon-based planar devices for narrow-band near-infrared photodetection using Tamm plasmons [PDF]
NanophotonicsDesigning efficient narrow-band near-infrared photodetectors integrated on silicon for telecommunications remains a significant challenge in silicon photonics.
Liang Wenyue +3 more
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Near-Infrared Photodetection Based on a Graphene/Intercalated-Graphene Junction
IEEE Photonics JournalGraphene holds unique properties such as high mobility and optical transparency, along with flexibility, robustness and environmental stability, which makes it shine amongst 2D materials in the future of photonics and optoelectronic devices. In this work,
Farhad Larki +7 more
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