Results 21 to 30 of about 1,852 (195)

Narrowband photodetection in the near-infrared with a plasmon-induced hot electron device [PDF]

Nature Communications, 2013
In gratings, incident light can couple strongly to plasmons propagating through periodically spaced slits in a metal film, resulting in a strong, resonant absorption whose frequency is determined by the nanostructure periodicity. When a grating is patterned on a silicon substrate, the absorption response can be combined with plasmon-induced hot ...
Ali, Sobhani, Mark W, Knight, Yumin, Wang, Bob, Zheng, Nicholas S, King, Lisa V, Brown, Zheyu, Fang, Peter, Nordlander, Naomi J, Halas   +8 more
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Near-Infrared Photoresponse in Ge/Si Quantum Dots Enhanced by Photon-Trapping Hole Arrays

Nanomaterials, 2021
Group-IV photonic devices that contain Si and Ge are very attractive due to their compatibility with integrated silicon photonics platforms. Despite the recent progress in fabrication of Ge/Si quantum dot (QD) photodetectors, their low quantum efficiency
Andrew I. Yakimov, Victor V. Kirienko, Aleksei A. Bloshkin, Dmitrii E. Utkin, Anatoly V. Dvurechenskii   +4 more
doaj   +1 more source

Spectrally Switchable Photodetection with Near-Infrared-Absorbing Covalent Organic Frameworks [PDF]

Journal of the American Chemical Society, 2017
Most covalent organic frameworks (COFs) to date are made from relatively small aromatic subunits, which can only absorb the high-energy part of the visible spectrum. We have developed near-infrared-absorbing low bandgap COFs by incorporating donor-acceptor-type isoindigo- and thienoisoindigo-based building blocks.
Derya Bessinger, Laura Ascherl, Florian Auras, Thomas Bein   +3 more
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Angle-Selective Photodetection in Ge/Si Quantum Dot Photodiodes Enhanced by Microstructured Hole Arrays

Photonics, 2023
We report on the near-infrared (NIR) photoresponse of a micropatterned Ge/Si quantum dot (QD) pin photodiode at different angles of radiation incidence.
Andrew I. Yakimov, Victor V. Kirienko, Aleksei A. Bloshkin, Dmitrii E. Utkin, Anatoly V. Dvurechenskii   +4 more
doaj   +1 more source

Light-Trapping-Enhanced Photodetection in Ge/Si Quantum Dot Photodiodes Containing Microhole Arrays with Different Hole Depths

Nanomaterials, 2022
Photodetection based on assemblies of quantum dots (QDs) is able to tie the advantages of both the conventional photodetector and unique electronic properties of zero-dimensional structures in an unprecedented way. However, the biggest drawback of QDs is
Andrew I. Yakimov, Victor V. Kirienko, Dmitrii E. Utkin, Anatoly V. Dvurechenskii   +3 more
doaj   +1 more source

Ultrafast and highly sensitive infrared photodetectors based on two-dimensional oxyselenide crystals

Nature Communications, 2018
Two-dimensional (2D) bismuth oxyselenide crystals with suitable electronic band-gap and ultrahigh carrier mobility enable near-infrared photodetection.
Jianbo Yin, Zhenjun Tan, Hao Hong, Jinxiong Wu, Hongtao Yuan, Yujing Liu, Cheng Chen, Congwei Tan, Fengrui Yao, Tianran Li, Yulin Chen, Zhongfan Liu, Kaihui Liu, Hailin Peng   +13 more
doaj   +1 more source

Comprehensive Analysis and Optimal Design of Ge/GeSn/Ge p-n-p Infrared Heterojunction Phototransistors

IEEE Journal of the Electron Devices Society, 2019
We present a comprehensive analysis of practical p-n-p Ge/Ge1-xSnx/Ge heterojunction phototransistors (HPTs) for design optimization for efficient infrared detection.
Ankit Kumar Pandey, Rikmantra Basu, Harshvardhan Kumar, Guo-En Chang   +3 more
doaj   +1 more source

Improper High‐Tc Perovskite Ferroelectric with Dielectric Bistability Enables Broadband Ultraviolet‐to‐Infrared Photopyroelectric Effects

Advanced Science, 2023
The photopyroelectric effect in ferroelectrics has shown great potential for application in infrared detection and imaging. One particular subclass is broadband with dielectric bistability, which allows for large pyroelectric figures‐of‐merit (FOMs ...
Lina Hua, Jiaqi Wang, Yi Liu, Wuqian Guo, Yu Ma, Haojie Xu, Shiguo Han, Junhua Luo, Zhihua Sun   +8 more
doaj   +1 more source

A High-Performance MoS2-Based Visible–Near-Infrared Photodetector from Gateless Photogating Effect Induced by Nickel Nanoparticles

Research, 2023
Recent advancements in two-dimensional materials have shown huge potential for optoelectronic applications. It is challenging to achieve highly effective and sensitive broadband photodetection based on MoS2 devices.
Ran Duan, Weihong Qi, Panke Li, Kewei Tang, Guoliang Ru, Weimin Liu   +5 more
doaj   +1 more source

Near-infrared photodetection in nanocarbon materials

, 2023
Die Umwandlung von Licht in Elektrizität ist das Herzstück von Solarzellen und Photodetektoren sowie von anderen optoelektronischen Geräten, die in Telekommunikationssystemen eingesetzt werden. Insbesondere die Fotodetektion im nahen Infrarot (NIR) ist für Anwendungen in den Bereichen Nachtsicht, Fernerkundung, Lebensmittelkontrolle und Überwachung von
openaire   +2 more sources