Results 91 to 100 of about 272,034 (235)

Toward Next‐Generation High‐Speed Communication and Imaging: Solution‐Processed Sb2(S,Se)3/CdS Heterojunction for Ultrafast Self‐Powered Photodetector

Advanced Science, EarlyView.
A high‐quality solution‐processed Sb2(S,Se)3/CdS heterojunction is designed to overcome the intrinsic limitations of conventional photodetectors. The fabricated device achieves an excellent self‐powered performance, including a high responsivity of 0.6 A W−1, an ultrahigh specific detectivity of 7.68 × 1012 Jones, and a wide 3db bandwidth of 175 kHz ...
Xuhua Xiao, Yichao Wang, Jingxuan Bian, Hailong Wang, Yongqiang Wang, Jinpeng Xu, Junwei Chen   +6 more
wiley   +1 more source

Toward understanding and optimizing Au-hyperdoped Si infrared photodetectors

APL Materials, 2020
Au-hyperdoped Si absorbs near-infrared (NIR) light and recent efforts have successfully produced Si-based NIR photodetectors based on this property but with low detection efficiencies.
S. Q. Lim, C. T.-K. Lew, P. K. Chow, J. M. Warrender, J. S. Williams, B. C. Johnson   +5 more
doaj   +1 more source

Scalable fabrication of inch-sized FAPbI3 perovskite wafers for highly sensitive near-infrared photodetection

Energy Materials
Perovskite wafers, with superior optoelectronic properties and stability, show great promise for photovoltaic and photoelectric applications. However, traditional solution growth methods struggle with crystallization control and phase purity, while solid-
Chao Li, Zuolin Zhang, Chenglin Wang, Mengjia Li, Jike Ding, Cong Chen   +5 more
semanticscholar   +1 more source

Intrinsic Negative Magnetoresistance and Broadband Photoresponse in Magnetic van der Waals Crystal TaFeTe2

Advanced Science, EarlyView.
2D van der Waals (vdW) materials MM′Te2 with broken symmetry attract great interest for unique magnetic structures and optical‐phonon‐induced phase transitions. We report mechanically exfoliable TaFeTe2 single crystals, exhibiting spin‐glass behavior, intrinsic unsaturated negative magnetoresistance up to 9 T, self‐powered internal photocurrent, and ...
Changcun Li, Jiazhen Wu, Sirong Lu, Lei Liang, Wenying Zhou, Bingke Zhang, Degang Zhao, Fucai Liu   +7 more
wiley   +1 more source

Molecular Sieve Promoted Growth of Ferroelectric Trilayer 3R‐MoS2 for Polarization‐Dependent Reconfigurable Optoelectronic Synapses

Advanced Science, EarlyView.
The noncentrosymmetric trilayer rhombohedral‐stacked MoS2 nanoflakes with enhanced sliding ferroelectric properties are synthesized via a molecular sieve‐assisted chemical vapor deposition process. The switchable polarization states, combined with the exceptional light/gate voltage modulated electrical properties of these nanoflakes, enable broadband ...
Qichao Xue, Jincheng Zhang, Yuying Wang, Yu Wang, Kuiwei Li, Yuxuan Chen, Fang Zhong, Qing Li, Ning Zhou, Chenying Yang, Yuchuan Shao, Tao Liang   +11 more
wiley   +1 more source

Optoelectronic‐Driven van der Waals Ferroelectric Materials‐Based Memory Devices for Retinomorphic and In‐Sensory Hardware

Advanced Science, EarlyView.
2D ferroelectrics materials enabling non‐volatile polarization memory, optical excitability, and neuromorphic processing within a unified material and provides a mechanistic analysis of polarization‐induced band modulation, including photon‐assisted domain reorientation, switching kinetics, and interfacial dipole coupling that governs resistive ...
Parthasarathi Pal, Yeong‐Her Wang, Sanjay Kumar, Themis Prodromakis   +3 more
wiley   +1 more source

Synergistic Pyro‐Phototronics and Structural Anisotropy in CsAg2I3/GaN Heterostructures for High‐Performance Polarization‐Sensitive UV Photodetectors

Advanced Science, EarlyView.
The development of polarization‐sensitive ultraviolet photodetectors is limited by poor heterojunction quality and low polarization sensitivity. This study integrates synthesized CsAg2I3 single crystals with intrinsic non‐centrosymmetry into van der Waals heterojunction devices, demonstrating pronounced pyro‐phototronic effect.
Yalin Zhai, Siqi Wang, Peng Guo, Songling Feng, Peng Wan, Jilong Tang, Caixia Kan, Hui Li, Daning Shi, Mingming Jiang   +9 more
wiley   +1 more source

Semi‐Transparent Organic Photodiodes with Near‐Infrared Detection Fabricated by Inkjet Printing

Advanced Electronic Materials, EarlyView.
This work shows the inkjet printing of semi‐transparent and opaque organic photodiodes that enable light detection in the near‐infrared regime. Their transparency and high detection speed make them ideal for applications in soft robotics, wearable devices, and light communication systems.
Luis Arturo Ruiz‐Preciado, Peter Krebsbach, Mervin Seiberlich, Gerardo Hernandez‐Sosa   +3 more
wiley   +1 more source

Hot-Electron Injection in Au Nanorod–ZnO Nanowire Hybrid Device for Near-Infrared Photodetection

Nano Letters, 2014
In this Letter, we present a new class of near-infrared photodetectors comprising Au nanorods-ZnO nanowire hybrid systems. Fabricated hybrid FET devices showed a large photoresponse under radiation wavelengths between 650 and 850 nm, accompanied by an "ultrafast" transient with a time scale of 250 ms, more than 1 order of magnitude faster than the ZnO ...
Pescaglini, Andrea, Martín, Alfonso, Cammi, Davide, Juska, Gediminas, Ronning, Carsten, Pelucchi, Emanuele, Iacopino, Daniela   +6 more
openaire   +3 more sources

Solution Processed Polymer Source‐Gated Transistors for Zero‐Power Photosensing

Advanced Electronic Materials, EarlyView.
This study demonstrates the first solution‐processed bulk heterojunction organic source‐gated transistors (OSGTs) and photo‐OSGTs fabricated using DPP‐DTT: PCBM. Copper‐electrode OSGTs show deep off‐state at zero gate‐source voltage, channel length‐independent on‐state current, and low voltage saturation (γ = 0.22).
Eva Bestelink, Ahmed Wafic, Mattia Scagliotti, Dimitar Kutsarov, Imalka Jayawardena, Matteo Rapisarda, Radu A. Sporea   +6 more
wiley   +1 more source