Results 191 to 200 of about 272,034 (235)
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ACS Applied Materials & Interfaces, 2021
Novel group IV - V 2D semiconductors (e.g., GeAs and SiAs) have arisen as an attractive candidate for broad-band photodetection and optoelectronic applications. This 2D family has a wide tunable band gap, excellent thermodynamic stability, and strong in-plane anisotropy.
Ghada Dushaq, Mahmoud Rasras
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Novel group IV - V 2D semiconductors (e.g., GeAs and SiAs) have arisen as an attractive candidate for broad-band photodetection and optoelectronic applications. This 2D family has a wide tunable band gap, excellent thermodynamic stability, and strong in-plane anisotropy.
Ghada Dushaq, Mahmoud Rasras
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Near Infrared Absorption Enhancement of Graphene for High-Responsivity Photodetection
2019 IEEE 16th International Conference on Group IV Photonics (GFP), 2019Near-infrared strong light harvesting of graphene is obtained based on multipole resonance interference of silicon nanodisks. The ultrathin design allows the active area with effective generation of photo carriers, paving a new way for small footprint high-speed and high-responsivity photon detection.
Xiyuan Cao +3 more
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Angewandte Chemie International Edition, 2021
AbstractLarge‐area 2D cocrystals with strong near‐infrared (NIR) absorption have been designed and prepared. Driven by the intermolecular charge‐transfer (CT) interactions, zinc tetraphenylporphyrin (donor) and C60 (acceptor) self‐assemble into a NIR cocrystal with absorption wavelength up to 1080 nm. By tailoring the growth solvents and processes, the
Yu Wang +10 more
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AbstractLarge‐area 2D cocrystals with strong near‐infrared (NIR) absorption have been designed and prepared. Driven by the intermolecular charge‐transfer (CT) interactions, zinc tetraphenylporphyrin (donor) and C60 (acceptor) self‐assemble into a NIR cocrystal with absorption wavelength up to 1080 nm. By tailoring the growth solvents and processes, the
Yu Wang +10 more
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Journal of Colloid and Interface Science
Due to the low-cost in manufacturing and good compatibility with flexible substrate, lead sulfide quantum dots (PbS QDs) are increasingly regarded as a promising active material candidate for next-generation near-infrared (NIR) photodetectors.
Zexun Pan +9 more
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Due to the low-cost in manufacturing and good compatibility with flexible substrate, lead sulfide quantum dots (PbS QDs) are increasingly regarded as a promising active material candidate for next-generation near-infrared (NIR) photodetectors.
Zexun Pan +9 more
semanticscholar +1 more source
Near-Infrared Photodetection with Molecular Beam Epitaxy Grown Extended InGaAs
MRS Proceedings, 2005AbstractStrain-balanced InxGa1-xAs/InyGa1-yAs superlattices and fractional monolayer In0.532Ga0.468As/InAs superlattices were grown by solid-source molecular beam epitaxy (SSMBE) in order to extend the photodetection wavelength range beyond 1.7μm. Material qualities were characterized by transmitted electron microscope (TEM), X-ray diffraction (XRD ...
Jun-Xian Fu +3 more
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Small
Antimony selenide (Sb2Se3), a narrow-bandgap semiconductor with strong light absorption, exhibits photoresponse up to ≈1050 nm due to its intrinsic 1.15 eV bandgap.
Hailan Li +8 more
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Antimony selenide (Sb2Se3), a narrow-bandgap semiconductor with strong light absorption, exhibits photoresponse up to ≈1050 nm due to its intrinsic 1.15 eV bandgap.
Hailan Li +8 more
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Tunable Near‐Infrared Photodetection Enabled by Plasmonic Effect in Er‐Doped GaAs
Advanced Optical MaterialsLocalized surface plasmon resonance (LSPR)‐induced electron transfer presents a compelling strategy for enhancing and expanding the functionality of optoelectronic devices.
Yuanbo Cheng +5 more
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Advanced Optical Materials
2D van der Waals (2D vdW) ferroelectric heterojunctions hold promise for advancing optoelectronic technologies. However, several challenges remain, such as carrier recombination and tunability.
Ming Chen +13 more
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2D van der Waals (2D vdW) ferroelectric heterojunctions hold promise for advancing optoelectronic technologies. However, several challenges remain, such as carrier recombination and tunability.
Ming Chen +13 more
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Laser & Photonics Reviews
Near‐infrared (NIR) photodetection has important applications in many fields. To improve NIR response in halide perovskites, two main approaches are reducing the bandgap or creating sub‐bandgap states through doping/alloying. In this study, the existence
Yayong Hu +8 more
semanticscholar +1 more source
Near‐infrared (NIR) photodetection has important applications in many fields. To improve NIR response in halide perovskites, two main approaches are reducing the bandgap or creating sub‐bandgap states through doping/alloying. In this study, the existence
Yayong Hu +8 more
semanticscholar +1 more source
ACS Nano, 2018
Black phosphorus, a recently intensely investigated two-dimensional material, is promising for electronic and optoelectronic applications due to its higher mobility and thickness-dependent direct band gap. With its low direct band gap and anisotropic properties in nature, black phosphorus is also suitable for near-infrared polarization-sensitive ...
Prabhu K. Venuthurumilli +2 more
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Black phosphorus, a recently intensely investigated two-dimensional material, is promising for electronic and optoelectronic applications due to its higher mobility and thickness-dependent direct band gap. With its low direct band gap and anisotropic properties in nature, black phosphorus is also suitable for near-infrared polarization-sensitive ...
Prabhu K. Venuthurumilli +2 more
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