Results 211 to 220 of about 272,034 (235)
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Nanotechnology, 2017
The heterojunction between metal and silicon (Si) is an attractive route to extend the response of Si-based photodiodes into the near-infrared (NIR) region, so-called Schottky barrier diodes. Photons absorbed into a metallic nanostructure excite the surface plasmon resonances (SPRs), which can be damped non-radiatively through the creation of hot ...
Zhiyang, Qi +8 more
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The heterojunction between metal and silicon (Si) is an attractive route to extend the response of Si-based photodiodes into the near-infrared (NIR) region, so-called Schottky barrier diodes. Photons absorbed into a metallic nanostructure excite the surface plasmon resonances (SPRs), which can be damped non-radiatively through the creation of hot ...
Zhiyang, Qi +8 more
openaire +2 more sources
Advanced Optical Materials
Self‐powered near‐infrared (NIR) photodetectors utilizing low‐dimensional materials are promising owing to their low‐power‐consumption and superior photoresponse performance.
Jiang Wang +15 more
semanticscholar +1 more source
Self‐powered near‐infrared (NIR) photodetectors utilizing low‐dimensional materials are promising owing to their low‐power‐consumption and superior photoresponse performance.
Jiang Wang +15 more
semanticscholar +1 more source
2024 IEEE 19th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)
In this study, we achieved remarkable detection over a wide range of wavelengths, exhibiting distinguished responsivity with tenfold enhancement compared to the state-of-the-art. Light acquisition for long NIR wavelengths became possible through a single,
Eslam Abubakr +3 more
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In this study, we achieved remarkable detection over a wide range of wavelengths, exhibiting distinguished responsivity with tenfold enhancement compared to the state-of-the-art. Light acquisition for long NIR wavelengths became possible through a single,
Eslam Abubakr +3 more
openaire +2 more sources
Nanotechnology, 2018
A plasmon-induced hot-electron photodetector based on silicon nanopillar array is developed. The nanostructure is fabricated by reactive ion etching with a monolayer of self-assembled polystyrene nanosphere in hexagonal close-packed lattice as the mask.
Zhiqiang Yang +9 more
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A plasmon-induced hot-electron photodetector based on silicon nanopillar array is developed. The nanostructure is fabricated by reactive ion etching with a monolayer of self-assembled polystyrene nanosphere in hexagonal close-packed lattice as the mask.
Zhiqiang Yang +9 more
openaire +2 more sources
Near-infrared photodetection of β-FeSi2/Si heterojunction photodiodes at low temperatures
Applied Physics Letters, 2013n-type β-FeSi2/p-type Si heterojunction photodiodes were fabricated by facing-targets direct-current sputtering, and their near-infrared photodetection properties were studied in the temperature range of 50–300 K. At 300 K, devices biased at −5 V exhibited a current responsivity of 16.6 mA/W.
Shota Izumi +4 more
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Frontiers in Computing and Intelligent Systems
High-performance near-infrared photodetection is of great importance for applications in optical communication and imaging. Here, a vertically stacked WS2/MoTe2 van der Waals heterojunction with dual hBN encapsulation is constructed.
Chunli Zhou, Jieyu Dai, Huafeng Dong
semanticscholar +1 more source
High-performance near-infrared photodetection is of great importance for applications in optical communication and imaging. Here, a vertically stacked WS2/MoTe2 van der Waals heterojunction with dual hBN encapsulation is constructed.
Chunli Zhou, Jieyu Dai, Huafeng Dong
semanticscholar +1 more source
Advances in Materials
Multi‐functional optoelectronic devices that integrate the capacities of neuromorphic processing and photodetection are of pivotal importance for advancing optoelectronic techniques.
Chao Xie +8 more
semanticscholar +1 more source
Multi‐functional optoelectronic devices that integrate the capacities of neuromorphic processing and photodetection are of pivotal importance for advancing optoelectronic techniques.
Chao Xie +8 more
semanticscholar +1 more source
(Invited) Development of Ag- and Sn-Based Colloidal Quantum Dots for Near Infrared Photodetection
ECS Meeting AbstractsLow-cost photodetectors with sensitivity in the second near-infrared window (NIR-II, 1000–1700 nm) are highly demanded. Recently, we made the first demonstration of an Ag2Se colloidal quantum dots (QDs) photodiode with sensitivity up to 1200 nm.
Jianying Ouyang +7 more
semanticscholar +1 more source
IEEE Transactions on Electron Devices
2-D transition metal dichalcogenides (TMDCs) have great potential in ultra-thin photodetectors. However, the atomically thin thickness leads to weak light absorption, thus hindering their applications. Herein, this work demonstrates that the modification
Dao Chen +10 more
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2-D transition metal dichalcogenides (TMDCs) have great potential in ultra-thin photodetectors. However, the atomically thin thickness leads to weak light absorption, thus hindering their applications. Herein, this work demonstrates that the modification
Dao Chen +10 more
openaire +2 more sources
Journal of Materials Chemistry A
In the realm of imaging and optoelectronic devices, near-infrared (NIR) light has garnered significant attention due to its unique properties of deep tissue penetration and anti-interference capability.
Yueling Lai +8 more
semanticscholar +1 more source
In the realm of imaging and optoelectronic devices, near-infrared (NIR) light has garnered significant attention due to its unique properties of deep tissue penetration and anti-interference capability.
Yueling Lai +8 more
semanticscholar +1 more source