Results 121 to 130 of about 3,764,554 (269)
Advanced Functional Materials, EarlyView.Controlling counterion exchange rate during aqueous phase separation enables the formation of skin‐free, homogeneously porous polyelectrolyte complex hydrogels by suppressing kinetically trapped skin layers and macrovoids. The resulting hydrogel networks exhibit exceptional toughness (∼15 MJ·m−3) and enable 3D (bio)printing and post‐functionalization ...
Adrivit Mukherjee +7 more
wiley +1 more source
Negative Capacitance for Ultra-low Power Computing [PDF]
, 2015 Owing to the fundamental physics of the Boltzmann distribution, the ever-increasing power dissipation in nanoscale transistors threatens an end to the almost-four-decade-old cadence of continued performance improvement in complementary metal-oxide ...
Khan, Asif Islam
core +1 more source
Advanced Functional Materials, EarlyView.This Perspective highlights atom probe tomography as a powerful tool for understanding the atomic‐scale defect chemistry in HfO2‐based ferroelectrics. 3D mapping of dopants, point defects, and interface chemistry can provide new insight into defect‐driven mechanisms underpinning the ferroelectricity in the system and guide the design of more reliable ...
Kasper Hunnestad +3 more
wiley +1 more source
Room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure
, 2015 We demonstrate room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure. In epitaxially grown superlattice of ferroelectric BSTO (Ba0.8Sr0.2TiO3) and dielectric LAO (LaAlO3), capacitance was found to be larger ...
Martí, Xavier +2 more
core +1 more source
Advanced Functional Materials, EarlyView.Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park +12 more
wiley +1 more source
Length dependent hysteresis phenomena in negative capacitance field effect transistor
Journal of Physics CommunicationsIn this article, we explore a noteworthy aspect of Negative Capacitance FETs (NCFETs): the influence of transistor feature size on hysteresis behavior. The ferroelectric capacitance is directly proportional to the channel length, so as the transistor is ...
Akshatha Bhat +5 more
doaj +1 more source
Two Coexisting Pathways to Volatility in Valence‐Change Memory Devices
Advanced Functional Materials, EarlyView.Volatile VCM‐type memristive devices exhibit current relaxation after resistive switching, but their microscopic origin remains debated. Using pulsed measurements and a new Tunnel‐DLTS approach on Pt/SrTiO3/Nb:SrTiO3 devices, we show that post‐SET volatility is predominantly ionic, while electronic contributions—arising from quasi‐Fermi‐level ...
Johannes Hellwig +3 more
wiley +1 more source
Design and Characterization of Ferroelectric Negative Capacitance [PDF]
, 2018 Because of the thermal distribution of electrons in a semiconductor, modern transistors cannot be turned on more sharply than 60 mV of gate voltage for an order of magnitude increase in drain current, the so-called ”Boltzmann tyranny.” This results in an
Chatterjee, Korok
core
ZrOx Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior. [PDF]
Nanoscale Res Lett, 2021 Zhang S +5 more
europepmc +1 more source
Binary‐to‐Ternary Reconfigurable Transistors Using Plasma‐Assisted MoS2
Advanced Functional Materials, EarlyView.A binary‐to‐ternary reconfigurable transistor is demonstrated using a dual‐gated molybdenum disulfide homojunction with localized O2 plasma treatment. The device exhibits on/intermediate and intermediate/off current ratios of 102 and 104, respectively, and the intermediate state is electrically tunable in the ternary mode.
Yeonghyeon Ko +7 more
wiley +1 more source