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Negative Differential Resistance in Negative Capacitance FETs

IEEE Electron Device Letters, 2018
We report the investigation of negative differential resistance (NDR) in negative capacitance (NC) germanium (Ge) pFETs. The NDR in NC transistors is attributed to the coupling of drain voltage to the internal gate voltage ${V}_{\text {int}}$ via the gate-to-drain capacitance.
Jiuren Zhou   +8 more
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Negative capacitance transistors

2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2018
Phase transition materials have long been investigated for fundamental physics and also for potential application in electronics. In this presentation, I shall discuss how a controlled phase transition can lead to fundamentally new switching devices that has significantly less energy dissipation compared to the state of the art.
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DFT Models of Negative Capacitance

2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2020
Negative capacitance (or more properly negative differential capacitance) is thought to result from the electrostatic interaction between adjacent layers of a paraelectric and a ferroelectric. The key experimental signature of negative capacitance is a high dielectric constant but an atomic model for this phenomenon in Hf 0.5 Zr 0.5 O 2 has not been ...
K. Chae, K. J. Cho, A. C. Kummel
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Ferroelectrics, Negative Capacitance and Depolarization Field: What exactly is negative capacitance?

2019 Device Research Conference (DRC), 2019
2019 marks the 11th year since the concept of ferroelectric negative capacitance was first proposed [1]. It was proposed as a physics solution to an engineering problem: The power dissipation in electronics and computing. Yet, it was unique in that the technology required a fundamental scientific discovery in a field that was ~90 years old at that time-
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Negative Capacitance Transistor

2012
Silicon technology has advanced through the past four decades at exponential rate both in performance and productivity. Along with the miniaturization, the power demand grew also exponentially. New technologies are studied in order to develop switches that commute faster and, in the near future, we might see an increasing number of hybrid approaches to
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(Invited) Negative Capacitance Transistors

ECS Meeting Abstracts, 2016
Negative capacitance is a new state within ferroelectric materials that exploits a region of thermodynamic space that is otherwise forbidden. In the conventional thinking, a material that goes through a ferroelectric phase transition, develops an energy landscape such that two degenerate states are separated by an energy barrier.
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Negative capacitance gives a positive boost

Nature Nanotechnology, 2017
Negative capacitance effect in a ferroelectric-based gate stack provides an effective solution for hysteresis-free steep-slope  operation in a MoS2 field-effect transistor.
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Wideband inductorless transimpedance amplifier using capacitive degeneration and negative capacitance

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2020
AbstractThis paper presents a new wideband inductorless CMOS transimpedance amplifier (TIA) for 10Gb/s applications. In this proposed TIA, inverter‐based common‐drain active feedback topology is modified by introducing a cascode transistor to reduce input impedance.
Preeti Singh, Maneesha Gupta
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Effect of different capacitance matching on negative capacitance FDSOI transistors

Microelectronics Journal, 2020
Abstract Negative capacitance field-effect transistors (NCFETs) have several advantages over traditional metal-oxide-semiconductor field-effect transistors (MOSFETs) and are considered to be promising technology for the next generation of integrated circuits nodes.
Tianyu Yu   +4 more
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Negative capacitances in TIA applications

2021
Large area photodiodes (PDs) are advantageous for long distance optical data transmission in free space, but impact the bandwidth and noise performance of the transimpedance amplifier (TIA) that converts and amplifies the photocurrent, due to significant parasitic capacitance. Negative equivalent capacitance can be generated at the input of the TIA via
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