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Negative differential resistance of porous silicon
IEEE Electron Device Letters, 2000A porous silicon Al Schottky barrier diode shows differential negative resistance. The thin wires in porous silicon have much lower electron mobility than that of thick wires, due to electron surface scattering from space confinement. The energy of carriers in thick wires increases with applied bias.
null Ming-Kwei Lee +4 more
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Negative Differential Resistance in C60 Diodes
2009Morphology studies and current-voltage (IV) measurements of C60 thin film diodes in the temperature range of 300–4.2 K are presented. For defined evaporation parameters orientation domains along the growth direction are demonstrated by cross section transmission electron microscopy.
Philipp Stadler +6 more
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New negative differential resistance effects in the negative resistance field-effect transistor
Journal of Applied Physics, 1989We report two new effects of negative differential resistance in the modulation-doped AlGaAs/GaAs negative resistance field-effect transistor. Both effects are well controlled by a third electrode. Presence of a top n+ AlGaAs layer causes a hot-electron real-space transfer to this layer, and prevents the electron transfer to the collector.
A. Kastalsky +4 more
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Negative Differential Resistance (NDR) Measurements
1988We present results on the observation of resonant tunneling negative differential resistance (NDR) through a GaAs/AlGaAs superlattice structure at room temperature and at 4.2 K made by molecular beam epitaxy. The conduction mechanism for the superlattice is miniband conduction and the entire structure behaves similarly to the normal two-barrier ...
Z. Hatzopoulos +3 more
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Negative differential resistance at atomic contacts
Physical Review B, 1997Negative differential resistance is found for a pair of electrodes each consisting of a single Al atom coupled to a flat metal surface, where the Al atom is separated from the surface by a ``spacer'' atom (Br). This behavior is seen when the Al atoms are at a short distance from one another, and disappears when the distance is decreased to the point at
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Tunneling Negative Differential Resistance in a GSC
2013This chapter describes the discovery of a wide NDR region in a graphite silicone composite (GSC) at low temperatures. Experimental and theoretical evidence is used to demonstrate that the NDR originates from a semi-metal to insulator transition of embedded bilayers in specifically orientated graphite nanoparticles. NDR has not been observed before in a
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The Instability of Negative Differential Resistance
physica status solidi (b), 1966P. O. Massicot, P. L. Quinn
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Modulation of Negative Differential Resistance in Black Phosphorus Transistors
Advanced Materials, 2021Huijun Liu, Jun He, Jun He
exaly

