Results 211 to 220 of about 427,941 (305)

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

Unlocking Multi‐Valley Energy Pockets and Interface‐Induced Phonon Filtering in InSb Thermoelectrics by Reaction‐Driven Interface Engineering

open access: yesAdvanced Functional Materials, EarlyView.
InSb, a narrow‐bandgap semiconductor with high carrier mobility, is promising for thermoelectric energy conversion but suffers from high lattice thermal conductivity and strong bipolar conduction. Here, in situ interface engineering using Co2O3 nanoprecursors forms hierarchical CoSbx/In2O3/CoSb3 heterostructures that enhance phonon scattering and ...
Jiwu Xin   +10 more
wiley   +1 more source

Rapid Detection and Quantification of DMNB Vapors Using a Handheld Ion Mobility Spectrometer Operated near Ambient Temperature. [PDF]

open access: yesSensors (Basel)
Bocoș-Bințințan V   +5 more
europepmc   +1 more source

Engineering Intelligent Graphene Oxide‐Cellulose Membranes: Suppressing Thermal Runaway for a Safer Aqueous Zinc‐Ion Batteries

open access: yesAdvanced Functional Materials, EarlyView.
A novel thermos‐responsive hydroxypropyl cellulose/graphene oxide (HPC/GO) composite membrane is fabricated for reversible temperature‐gated ion transport in aqueous zinc‐ion batteries. Enabled by LCST‐driven structural transition, unimpeded ion diffusion at room temperature delivers high capacity, while elevated temperature suppresses transport; full ...
Xueli Bi   +9 more
wiley   +1 more source

Memristor‐Driven Active‐Matrix Organic Light‐Emitting Diode for Energy Efficient and High‐Resolution Displays

open access: yesAdvanced Functional Materials, EarlyView.
This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim   +6 more
wiley   +1 more source

Hydrogen‐Bond–Driven Ion Retention in Electrolyte‐Gated Synaptic Transistors

open access: yesAdvanced Functional Materials, EarlyView.
Anion molecular design governs ion–polymer interactions in electrolyte‐gated synaptic transistors. Asymmetric anions induce hydrogen‐bond interactions that suppress ion back‐diffusion and stabilize doping, enabling enhanced nonvolatile synaptic properties.
Donghwa Lee   +5 more
wiley   +1 more source

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