Results 81 to 90 of about 5,948,394 (284)

Minimizer negative polarity items in non-negative contexts

open access: yesProceedings of the International Conference on Head-Driven Phrase Structure Grammar, 2021
Minimizer strong NPIs such as ˋˋlift a finger'' are known to be more restricted in their occurrence than weak NPIs like ˋˋever''. Sedivy 1990 points to contexts with a ˋˋnegative side message'' in which ˋˋlift a finger'' can occur but ˋˋever'' cannot.
openaire   +2 more sources

ITEM Grenseffectenrapportage 2017, Dossier 3: Sociale Zekerheid: Wijzigingsvoorstellen Verordening 883/2004 en 987/2009

open access: yes, 2017
De wijzigingsvoorstellen voor Coördinatieverordening 883/2004 en de ex ante ...
ITEM, Montebovi, Saskia
core  

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Laser‐Induced Graphene from Waste Almond Shells

open access: yesAdvanced Functional Materials, EarlyView.
Almond shells, an abundant agricultural by‐product, are repurposed to create a fully bioderived almond shell/chitosan composite (ASC) degradable in soil. ASC is converted into laser‐induced graphene (LIG) by laser scribing and proposed as a substrate for transient electronics.
Yulia Steksova   +9 more
wiley   +1 more source

Negative Polarity Items in Inverse Scope and Topicalized Clauses

open access: yes, 2007
Negative polarity items are words or phrases usually associated with a negative\ud licenser, such as the word ever, licensed by don't, in I don't think that I've ever\ud been so surprised, In unmarked sentences, the negative licenser typically commands ...
D'Angio, Sara
core  

Negation and negative polarity

open access: yes, 2013
A universal property of natural language is that every language is able to express negation, i.e., every language has some device at its disposal to reverse the truth value of the propositional content of a sentence.
Zeijlstra, H., Hedde Zeijlstra
core   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

Revisiting Particle-Stranding Ellipsis: A Critical Comparison of Two Analyses

open access: yesLanguages
This paper presents novel evidence that particle-stranding ellipsis in Japanese is best accounted for by PF-deletion rather than by its theoretical competitor, LF-copying. I begin by examining a central prediction of the LF-copying analysis, which states
Ryuta Ono
doaj   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

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