Results 81 to 90 of about 5,948,394 (284)
Minimizer negative polarity items in non-negative contexts
Minimizer strong NPIs such as ˋˋlift a finger'' are known to be more restricted in their occurrence than weak NPIs like ˋˋever''. Sedivy 1990 points to contexts with a ˋˋnegative side message'' in which ˋˋlift a finger'' can occur but ˋˋever'' cannot.
openaire +2 more sources
De wijzigingsvoorstellen voor Coördinatieverordening 883/2004 en de ex ante ...
ITEM, Montebovi, Saskia
core
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone +11 more
wiley +1 more source
Laser‐Induced Graphene from Waste Almond Shells
Almond shells, an abundant agricultural by‐product, are repurposed to create a fully bioderived almond shell/chitosan composite (ASC) degradable in soil. ASC is converted into laser‐induced graphene (LIG) by laser scribing and proposed as a substrate for transient electronics.
Yulia Steksova +9 more
wiley +1 more source
Negative Polarity Items in Inverse Scope and Topicalized Clauses
Negative polarity items are words or phrases usually associated with a negative\ud licenser, such as the word ever, licensed by don't, in I don't think that I've ever\ud been so surprised, In unmarked sentences, the negative licenser typically commands ...
D'Angio, Sara
core
Negation and negative polarity
A universal property of natural language is that every language is able to express negation, i.e., every language has some device at its disposal to reverse the truth value of the propositional content of a sentence.
Zeijlstra, H., Hedde Zeijlstra
core +1 more source
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
wiley +1 more source
Revisiting Particle-Stranding Ellipsis: A Critical Comparison of Two Analyses
This paper presents novel evidence that particle-stranding ellipsis in Japanese is best accounted for by PF-deletion rather than by its theoretical competitor, LF-copying. I begin by examining a central prediction of the LF-copying analysis, which states
Ryuta Ono
doaj +1 more source
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source

