Results 111 to 120 of about 5,366,310 (324)
New fusion rules and $\cR$-matrices for $SL(N)_q$ at roots of unity
We derive fusion rules for the composition of $q$-deformed classical representations (arising in tensor products of the fundamental representation) with semi-periodic representations of $SL(N)_q$ at roots of unity.
Albertini +28 more
core +1 more source
This table of contents illustrates that the mechanism for mitigating Sr segregation depends strongly on the chemistry of the coating layer. HfO2 electrostatically stabilizes the surface by lowering the surface oxygen vacancies, which serve as the driving force for Sr migration. On the other hand, Al2O3 and Fe2O3 react with segregated Sr to form Sr‐Al‐O
Jongsu Seo +8 more
wiley +1 more source
Gapless Superconductivity From Extremely Dilute Magnetic Disorder in 2H‐NbSe2‐xSx
We demonstrate that 2H‐NbSe2‐xSx hosts gapless superconductivity at unexpectedly low magnetic impurity concentrations. Combining STM, Bogoliubovde Gennes simulations, DFT, and quasiparticle interference, we comprehensively study the development of gapless behavior and show that SeS substitution reshapes the band structure, enhances nesting, and drives ...
Jose Antonio Moreno +16 more
wiley +1 more source
Elephant‐skin‐inspired crack networks are programmed in porous diatomaceous earth (DE)‐cement composites using substrate‐guided, stress‐concentration induced fracture. The resulting crack lattices act as capillary conduits that redistribute water, while the porous matrix stores moisture.
Qingya Huang +5 more
wiley +1 more source
Negative triangularity (NT) magnetic configurations have recently gained attention as a promising route to achieve H-mode-like confinement without edge-localized modes and without a power threshold for access.
F. Mombelli +9 more
doaj +1 more source
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci +12 more
wiley +1 more source
Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories
This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley +1 more source
A quantitative evaluation of topological motifs and their coupling in gene circuit state distributions. [PDF]
Clauss B, Lu M.
europepmc +1 more source
Low‐power ferroelectric capacitors, based on superlattice HfO2‐ZrO2 is reported. With proper tuning of ferro and antiferroelectricity, an imprint‐free high switchable polarization charge (2Pr of 76 µC/cm2) is obtained with 2MV/cm leading to linear analog weight update and non‐volatile retention, providing a design guideline for emerging non‐volatile ...
Xinye Li +4 more
wiley +1 more source
Magnetic control of tokamak plasmas through deep reinforcement learning. [PDF]
Degrave J +30 more
europepmc +1 more source

