Results 201 to 210 of about 143,065 (336)
Metal halide perovskite field‐effect transistors (PeFETs) offer great promise for flexible, low‐cost, and high‐performance due to their excellent charge carrier properties. However, challenges like ion migration, hysteresis, and instability limit their performance.
Georgios Chatzigiannakis +13 more
wiley +1 more source
Analysis of dynamic network reconfiguration in HIV patients with cognitive impairment based multilayer network. [PDF]
Jiang X, Ma J, Hou C, Li H.
europepmc +1 more source
Impact of childhood adversity on network reconfiguration dynamics during working memory in hypogonadal women. [PDF]
Shanmugan S +9 more
europepmc +1 more source
A polymorphic reconfigurable multi‐electrode device based on electrically bistable nanostructured metallic films. The adaptive reconfiguration properties of the nanostructured network under specific input voltages drive the reprogrammability of the device. This system can be employed for the implementation of polymorphic devices, which can be used both
Silvia Bressan +4 more
wiley +1 more source
Multilayer network analysis of dynamic network reconfiguration in age-related hearing loss: a cross-sectional case-control study. [PDF]
Song J +7 more
europepmc +1 more source
Optimal network reconfiguration for power loss minimization and voltage profile enhancement in distribution systems. [PDF]
Salau AO, Gebru YW, Bitew D.
europepmc +1 more source
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley +1 more source
Differential spatial working memory-related functional network reconfiguration in young and older adults. [PDF]
Yue WL +11 more
europepmc +1 more source
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez +12 more
wiley +1 more source

