Results 71 to 80 of about 346,570 (361)

Approximation of tricomi problem with Neumann boundary condition

Numerische Mathematik, 1984
The Tricomi problem with Neumann boundary condition is reduced to a degenerate problem in the elliptic region with a non-local boundary condition and to a Cauchy problem in the hyperbolic region. A variational formulation is given to the elliptic problem and a finite element approximation is studied.
Vanninathan, M., Veerappa Gowda, G.D.
openaire   +2 more sources

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Turing–Hopf bifurcation of a ratio-dependent predator-prey model with diffusion

Advances in Difference Equations, 2019
In this paper, the Turing–Hopf bifurcation of a ratio-dependent predator-prey model with diffusion and Neumann boundary condition is considered. Firstly, we present a kind of double parameters selection method, which can be used to analyze the Turing ...
Qiushuang Shi, Ming Liu, Xiaofeng Xu
doaj   +1 more source

Intrinsic Nanopore‐Assisted SnP2S6 Memristors With Ti Ion Dynamics for Compact Logic‐In‐Memory Hardware

Advanced Functional Materials, EarlyView.
Tin hexathiophosphate memristors leverage intrinsic nanopores together with a guided filament formation strategy to regulate titanium ion motion and switching behavior. The devices support reliable nonvolatile memory and reconfigurable logic‐in‐memory, demonstrating 14 Boolean logic functions in a single cell.
Thaw Tint Te Tun, Sanchali Mitra, Hongxi Su, Jiali Huo, Haofei Zheng, Michel Bosman, Yee Sin Ang, Kah‐Wee Ang   +7 more
wiley   +1 more source

Repulsive Casimir force from fractional Neumann boundary conditions

Physics Letters B, 2009
Esta carta estudia la fuerza de Casimir de temperatura finita que actúa sobre un pistón rectangular asociado con un campo de Klein–Gordon fraccional sin masa a temperatura finita. Las condiciones de contorno de Dirichlet se imponen en las paredes de una cavidad rectangular de dimensión d, y se impone una condición de Neumann fraccional en el pistón que
Sungbin Lim, Lee-Peng Teo
openaire   +2 more sources

Molecularly Engineered Highly Stable Memristors with Ultra‐Low Operational Voltage: Integrating Synthetic DNA with Quasi‐2D Perovskites

Advanced Functional Materials, EarlyView.
Molecularly engineered memristors integrating Ag nanoparticle–embedded synthetic DNA with quasi‐2D halide perovskites enable ultra‐low‐operational voltage, forming‐free resistive switching, and record‐low power density. This synergistic integration of customized DNA and 2D OHP in bio‐hybrid architecture enhances charge transport, reduces variability ...
Kavya S. Keremane, Abhinav Gorthy, Luyao Zheng, Chiranth C Ravi, Haodong Wu, Jiamao Zheng, Neela H. Yennawar, Shashank Priya, Rashmi Jha, Bed Poudel   +9 more
wiley   +1 more source

Abelian mirror symmetry of N $$ \mathcal{N} $$ = (2, 2) boundary conditions

Journal of High Energy Physics, 2021
We evaluate half-indices of N $$ \mathcal{N} $$ = (2, 2) half-BPS boundary conditions in 3d N $$ \mathcal{N} $$ = 4 supersymmetric Abelian gauge theories.
Tadashi Okazaki
doaj   +1 more source

BEOL‐Compatible Liquid‐Metal‐Printing of Ultrathin 2D Oxide Memtransistors and Its Applications in Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Ultrathin 2D indium oxide memtransistors are reproducibly fabricated via a scalable liquid‐metal‐printing process under ambient, low‐temperature conditions. The devices achieve robust, gate‐tunable bipolar memristive switching with high switching ratios at a BEOL‐compatible maximum processing temperature of 300°C. Governed by trap‐controlled transport,
Sanghyun Moon, Seungyun Lee, Sunghan Cho, Donggyu Lee, Jehwan Park, Seongyun Yang, Jihyun Kim   +6 more
wiley   +1 more source

On an elliptic system of p(x)-Kirchhoff-type under neumann boundary condition

Mathematical Modelling and Analysis, 2012
In the present paper, by using the direct variational method and the Ekeland variational principle, we study the existence of solutions for an elliptic system of p(x)-Kirchhoff-type under Neumann boundary condition and show the existence of a weak ...
Zehra Yucedag, Mustafa Avci, Rabil Mashiyev   +2 more
doaj   +1 more source

Exact internal controllability for the wave equation in a domain with oscillating boundary with Neumann boundary condition

, 2015
In this paper, we study the exact controllability of a second order linear evolution equation in a domain with highly oscillating boundary with homogeneous Neumann boundary condition on the oscillating part of boundary.
U. Maio, A. K. Nandakumaran, C. Perugia
semanticscholar   +1 more source