Results 71 to 80 of about 174,758 (288)

Repulsive Casimir force from fractional Neumann boundary conditions

open access: yesPhysics Letters B, 2009
Esta carta estudia la fuerza de Casimir de temperatura finita que actúa sobre un pistón rectangular asociado con un campo de Klein–Gordon fraccional sin masa a temperatura finita. Las condiciones de contorno de Dirichlet se imponen en las paredes de una cavidad rectangular de dimensión d, y se impone una condición de Neumann fraccional en el pistón que
Sungbin Lim, Lee-Peng Teo
openaire   +2 more sources

Molecularly Engineered Highly Stable Memristors with Ultra‐Low Operational Voltage: Integrating Synthetic DNA with Quasi‐2D Perovskites

open access: yesAdvanced Functional Materials, EarlyView.
Molecularly engineered memristors integrating Ag nanoparticle–embedded synthetic DNA with quasi‐2D halide perovskites enable ultra‐low‐operational voltage, forming‐free resistive switching, and record‐low power density. This synergistic integration of customized DNA and 2D OHP in bio‐hybrid architecture enhances charge transport, reduces variability ...
Kavya S. Keremane   +9 more
wiley   +1 more source

Simultaneous control for the heat equation with Dirichlet and Neumann boundary conditions

open access: yesComptes Rendus. Mathématique
It is well known that both the heat equation with Dirichlet or Neumann boundary conditions are null controlable as soon as the control acts in a non trivial domain (i.e. a set of positive measure).
Burq, Nicolas, Moyano, Ivan
doaj   +1 more source

On the asymptotic shape of solutions to Neumann problems for non-cooperative parabolic systems

open access: yes, 2014
We consider a class of nonautonomous parabolic competition-diffusion systems on bounded radial domains under Neumann boundary conditions. We show that, if the initial profiles satisfy a reflection inequality with respect to a hyperplane, then global ...
Saldaña, Alberto, Weth, Tobias
core   +1 more source

BEOL‐Compatible Liquid‐Metal‐Printing of Ultrathin 2D Oxide Memtransistors and Its Applications in Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
Ultrathin 2D indium oxide memtransistors are reproducibly fabricated via a scalable liquid‐metal‐printing process under ambient, low‐temperature conditions. The devices achieve robust, gate‐tunable bipolar memristive switching with high switching ratios at a BEOL‐compatible maximum processing temperature of 300°C. Governed by trap‐controlled transport,
Sanghyun Moon   +6 more
wiley   +1 more source

On the Solvability of Discrete Nonlinear Two-Point Boundary Value Problems

open access: yesInternational Journal of Mathematics and Mathematical Sciences, 2012
We prove the existence and uniqueness of solutions for a family of discrete boundary value problems by using discrete's Wirtinger inequality. The boundary condition is a combination of Dirichlet and Neumann boundary conditions.
Blaise Kone, Stanislas Ouaro
doaj   +1 more source

Localized low-frequency Neumann modes in 2d-systems with rough boundaries

open access: yes, 2004
We compute the relative localization volumes of the vibrational eigenmodes in two-dimensional systems with a regular body but irregular boundaries under Dirichlet and under Neumann boundary conditions.
Born M.   +5 more
core   +2 more sources

Multi‐Scale Interface Engineering of MXenes for Multifunctional Sensory Systems

open access: yesAdvanced Functional Materials, EarlyView.
MXenes, as two‐dimensional transition metal carbides and nitrides, demonstrate remarkable capabilities for multifunctional sensing applications. This review systematically examines multi‐scale interface engineering approaches that enhance sensing performance, enable diverse detection functionalities, and improve system‐level compatibility in MXene ...
Jiaying Liao, Sin‐Yi Pang, Jianhua Hao
wiley   +1 more source

On a Waveguide with Frequently Alternating Boundary Conditions: Homogenized Neumann Condition [PDF]

open access: yesAnnales Henri Poincaré, 2010
We consider a waveguide modeled by the Laplacian in a straight planar strip. The Dirichlet boundary condition is taken on the upper boundary, while on the lower boundary we impose periodically alternating Dirichlet and Neumann condition assuming the period of alternation to be small. We study the case when the homogenization gives the Neumann condition
Borisov D, Bunoiu R, Cardone G.
openaire   +3 more sources

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

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