Portfolio Optimization: A Neurodynamic Approach Based on Spiking Neural Networks. [PDF]
Khan AH, Mohammed AM, Li S.
europepmc +1 more source
We demonstrate a hybrid WS2/CuInP2S6/graphene heterostructure integrated on a silicon nitride microring resonator for non‐volatile optical phase modulation with ultra‐low energy consumption and low insertion loss. While CIPS alone does not provide efficient optical index modulation, the engineered proposed device structure converts ferroelctric domain ...
Lalit Singh +10 more
wiley +1 more source
Polarizable Thiol-Ene Cross-Linked Nitrile Dielectrics for Stretchable Low-Voltage Neuromorphic Transistors with Acoustic Classification. [PDF]
Liu CJ +10 more
europepmc +1 more source
Emerging Device Applications From Strong Light–Matter Interactions in 2D Materials
Two‐dimensional semiconductors enable extremely compact optoelectronic devices such as solar cells, sensors, LEDs, and lasers. Their strong light–matter interactions allow efficient light emission, detection, and energy conversion. This review article discusses the recent progress in integrating these materials with optical cavities and nanostructures ...
Janani Archana K +7 more
wiley +1 more source
Editorial: Novel memristor-based devices and circuits for neuromorphic and AI applications, volume II. [PDF]
Abunahla H, Al-Sarawi S.
europepmc +1 more source
To overcome limitations of conventional AI hardware, a light‐voltage dual‐modulating synaptic (LVDS) transistor using an IGZO/InAs quantum dot hybrid structure is proposed. LVDS transistor enables analog summation for Dueling Deep Q‐Networks by independently modulating memory via optical and electrical stimuli.
Dong Gue Roe +10 more
wiley +1 more source
Neuromorphic robust framework for integrated estimation and control in dynamical systems using spiking neural networks. [PDF]
Ahmadvand R, Sharif SS, Banad YM.
europepmc +1 more source
Cation‐Driven Valence Change Mechanism in 2D AgCrS2 for Ultralow‐Power and Reliable Memristors
A 2D AgCrS2 volatile memristor is shown to switch via a cation‐driven valence change mechanism, where Ag+ reversibly intercalates into tetrahedral vacancies between CrS2 layers to form a conductive Ag2CrS2 pathway without elemental Ag metallization. The device exhibits 0.2 V switching, nA‐compliance power down to 200 pW, and endurance beyond 3 × 105 ...
Yueqi Su +8 more
wiley +1 more source
Polymorphic functionalization driven by ion displacement-induced antiferroelectric ordering in CuBiP₂Se₆. [PDF]
Yang D +11 more
europepmc +1 more source
Here, we propose a single‐crystal PZT‐based piezo‐phototronic organic adaptive memory transistor (OAMT), achieving a record memory window capacity factor (γ) of 0.87 at a low SS of 200 mV/decade via efficient multi‐field control. The device achieves a high recognition accuracy ∼ 90% in neuromorphic simulations, demonstrates robust fault tolerance under
Chenhao Xu +8 more
wiley +1 more source

