Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj +3 more
wiley +1 more source
Underlying Framework of All-optical Controlled Synaptic Devices for Neuromorphic Computing. [PDF]
Hu D, Yang R, Ye Z, Lu J.
europepmc +1 more source
A lead‐free perovskite memristive solar cell structure that call emulate both synaptic and neuronal functions controlled by light and electric fields depending on top electrode type. ABSTRACT Memristive devices based on halide perovskites hold strong promise to provide energy‐efficient systems for the Internet of Things (IoT); however, lead (Pb ...
Michalis Loizos +4 more
wiley +1 more source
Federated training of spiking neural networks on edge hardware for audio processing. [PDF]
Kaimal SS, Jb A, Reka SS, Venugopal P.
europepmc +1 more source
Low‐Power Control Of Resistance Switching Transitions in First‐Order Memristors
Joule losses are a serious concern in modern integrated circuit design. In this regard, minimizing the energy necessary for programming memristors should be handled with care. This manuscript presents an optimal control framework, allowing to derive energy‐efficient programming voltage protocols for resistance switching devices. Following this approach,
Valeriy A. Slipko +3 more
wiley +1 more source
Engineering and Exploiting Self-Driven Domain Wall Motion in Ferrimagnets for Neuromorphic Computing Applications. [PDF]
Brock JA +4 more
europepmc +1 more source
Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao +15 more
wiley +1 more source
Hafnium-Based Ferroelectric Post-Moore Electronics: Device Physics, Integration Architectures, and Neuromorphic System Implementation. [PDF]
Chen X, Wang Z, Meng J, Wang T.
europepmc +1 more source
Model‐Based Time‐Modulated Write Algorithm for 1R Analog Memristive Crossbar Arrays
A novel model‐based time‐modulated write algorithm efficiently programs analog 1R memristive crossbar arrays by varying pulse duration at a fixed voltage. By leveraging a physics‐based compact model and a dynamic gain mechanism, this approach overcomes device nonlinearities and parasitic effects.
Richard Schroedter +7 more
wiley +1 more source
Dynamical and Stochastic Analysis of a Piezoelectric Neuron Model for Intelligent Sensing Applications. [PDF]
Abdelkader A, Ehsan H, Jhangeer A.
europepmc +1 more source

