Results 221 to 230 of about 24,472 (312)

A Dual‐Memory Ferroelectric Transistor Emulating Synaptic Metaplasticity for High‐Speed Reservoir Computing

Advanced Electronic Materials, EarlyView.
A CMOS‐compatible ferroelectric transistor harnesses the interplay between stable gate polarization memory and volatile non‐quasi‐static channel charge dynamics to emulate how biological synapses regulate their own plasticity. This brain‐inspired dual‐memory mechanism, realized in a single device, enables a physical reservoir computer that solves ...
Yifan Wang, Muhammad Sakib Shahriar, Salma Soliman, Noah Vaillancourt, Lance Fernandes, Andrea Padovani, Asif Islam Khan, Md Sakib Hasan, Raisul Islam   +8 more
wiley   +1 more source

Ferroelectric nanodot reservoir for neuromorphic computing. [PDF]

Beilstein J Nanotechnol
Razumnaya A, Tikhonov Y, Naidenko D, Boron L, Vinokur V, Lukyanchuk I.   +5 more
europepmc   +1 more source

Ergonomic Sponge Electrodes From Recycled PEDOT:PSS

Advanced Electronic Materials, EarlyView.
ABSTRACT Emerging technologies in human–machine interfacing increasingly aim to develop solutions that naturally conform to the body's unique characteristics. Ergonomics and electrical performance in cutaneous sensing are crucial for accurate and reliable translation of biosignals.
Matías Ceballos, Wei‐Ting Ting, Susanne Thümmler, Esma Ismailova   +3 more
wiley   +1 more source

Recent Advances and Perspectives on Field-Effect Transistors for Artificial Visual Neuromorphic Systems. [PDF]

Adv Sci (Weinh)
Yaqian L, Menghua L, Yihang X, Manyu Z, Chunkang L, Xiaozhou L, Yi D, Lingli W, Liying J, Yuanyuan H, Huipeng C, Lang J.   +11 more
europepmc   +1 more source

SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range

Advanced Electronic Materials, EarlyView.
A physics‐guided compact model for YBCO memristors is introduced, incorporating carrier trapping, field‐induced detrapping, and a differential balance equation to describe their switching dynamics. The model is compared with experiments and implemented in LTspice, allowing realistic circuit‐level simulations.
Thomas Günkel, Aleix Barrera, Lluís Balcells, Narcís Mestres, Enrique Miranda, Anna Palau, Jordi Suñé   +6 more
wiley   +1 more source

Polyoxometalates (POMs) Memristors/Neuromorphic Devices: From Structure Engineering to Material and Function Integration. [PDF]

Nanomaterials (Basel)
Hu J, Xu S, Meng Y.
europepmc   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Superconducting artificial neural networks and quantum circuits. [PDF]

Beilstein J Nanotechnol
Sidorenko AS.
europepmc   +1 more source

In‐Sensor Computing by Soft Threshold Logic Gates Under Different Humidity Conditions

Advanced Electronic Materials, EarlyView.
Soft nanocomposite materials, based on gold cluster‐assembled thin films implanted in polydimethylsiloxane substrate, can perform reliable processing in ambient environmental conditions. Humidity influences the resistive switching and computational capabilities of the nanocomposites, that can be used as multifunctional material combining sensing ...
Giacomo Nadalini, Paolo Milani, Francesca Borghi   +2 more
wiley   +1 more source

Low Power Optoelectronic Neuromorphic Memristor for In-Sensor Computing and Multilevel Hardware Security Communications. [PDF]

Adv Sci (Weinh)
Sun B, Zhang J, Meng J, Wang T.
europepmc   +1 more source