Results 241 to 250 of about 31,264 (300)

Array of Cointegrated Transistor-Based Artificial Neurons and Synapses for Neuromorphic Computing. [PDF]

open access: yesSmall
Lee SW   +9 more
europepmc   +1 more source

Multi‐Modal Low‐Power Adaptive Braille Recognition System Based on Hf0.3Zr0.7O2 Memristor [PDF]

open access: yesAdvanced science
A multimodal adaptive perception system based on HZO ferroelectric memristor realizes efficient Braille digit recognition via reservoir computing. It delivers high recognition accuracy with ultralow‑energy analog computation, offering a promising hardware solution for environment‑robust neuromorphic assistive devices for visually impaired users ...
Xu J   +9 more
europepmc   +2 more sources

Gate Metal‐Driven Sensing and Memory Bifunctionality in Intrinsically Stretchable Organic Electrochemical Transistors for Soft Neuromorphic Systems

open access: yesAdvanced Science, EarlyView.
Intrinsically stretchable OECTs enable bifunctional operations via gate engineering. Polarizable Ag/AgCl gates provide volatile sensing, while Au gates enable non‐volatile memory. The SEBS‐blended channel maintains performance under strain, supporting reliable signal transduction.
Jiyong Yoon   +8 more
wiley   +1 more source

Instability-driven electrohydrodynamic neurons for probabilistic computing. [PDF]

open access: yesNat Commun
Sun M   +6 more
europepmc   +1 more source

Adaptive Conductive Systems: Enabling Deformable Electronics Through Engineered Materials, Circuits, and Intelligent Systems

open access: yesAdvanced Science, EarlyView.
This review presents the research advances of adaptive conductive systems from the perspective of materials, circuits, systems, and applications. Deformable conductors consist of substrates/matrices and conductive materials, structural design of circuit interconnections, fabrication of circuit interconnections, as well as intelligent systems ...
Yufei Lu   +7 more
wiley   +1 more source

Crystallized Domain Walls in HfO2 Enable Chessboard‐Type Ultra‐High‐Dense Ferroelectric Memory

open access: yesAdvanced Science, EarlyView.
In general, DWs in ferroelectrics stabilize within a widely spread transition region between two oppositely polarized domains, which severely limits the achievable memory density. Here, the reported DWs in HfO2 constitute perfect crystalline structures along arbitrary crystallographic directions, enabling the formation of the narrowest square‐shaped ...
Pawan Kumar   +4 more
wiley   +1 more source

Mechanically Durable Intrinsically Stretchable Neuromorphic Devices via Molecular Microstructure Design. [PDF]

open access: yesSmall
Kim KN   +12 more
europepmc   +1 more source

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