Results 201 to 210 of about 28,339 (330)

Multi-state MRAM cells for hardware neuromorphic computing

open access: gold, 2022
Piotr Rzeszut   +5 more
openalex   +1 more source

High‐Performance Ambipolar Organic Electrochemical Transistors Based on Diketopyrrolopyrrole‐Dialkoxybithiazole Conjugated Polymers for Single‐component Inverters

open access: yesAdvanced Science, EarlyView.
Two donor‐acceptor conjugated polymers, incorporating diketopyrrolopyrrole (DPP) and dialkoxybithiazole (2Tz) units with ethylene glycol (EG) side chains, exhibit relatively balanced ambipolar organic electrochemical transistor (OECT) performance. This ambipolarity enables the realization of single‐component complementary inverters capable of ternary ...
Jiazheng Li   +14 more
wiley   +1 more source

Utilizing Cooperative Proton–Electron Mixed Conduction Induced via Chemical Dedoping of Self‐Doped Poly(3,4‐ethylenedioxythiophene) Nanofilms for In‐Material Physical Reservoirs

open access: yesAdvanced Science, EarlyView.
This study demonstrates a new concept for high‐performance in‐material physical reservoirs (PRs). An intrinsic and cooperative ion–electron state, induced by chemical dedoping in self‐doped poly(3,4‐ethylenedioxythiophene) (S‐PEDOT) nanofilms, enhances the performance of in‐material PRs.
Yuya Ishizaki‐Betchaku   +10 more
wiley   +1 more source

Fast prototyping of memristors for ReRAMs and neuromorphic computing.

open access: yesNanoscale
Marraccini G   +7 more
europepmc   +1 more source

Ultrafast Multilevel Switching and Synaptic Behavior in a Planar Quantum Topological Memristor

open access: yesAdvanced Science, EarlyView.
Dry‐transferred Bi2Te3 layers enable a planar quantum topological memristor framework. In‐plane topological surface states facilitate ultrafast & low‐power operations. Coexisting analog and digital modes support current‐controlled multilevel states. PQTM exhibits 105 s retention, 103 cycles endurance, and reproducibility across 24 devices.
Mamoon Ur Rashid   +12 more
wiley   +1 more source

All‐Solid‐State Synaptic Transistor with Ultralow Conductance for Neuromorphic Computing

open access: green, 2018
Chuansen Yang   +8 more
openalex   +2 more sources

Integration of Freestanding High‐k Oxide Membranes for 2D Ferroelectric Field‐Effect Transistors

open access: yesAdvanced Science, EarlyView.
This work introduces a defect‐tolerant integration strategy that enables freestanding BaTiO3 membranes to form low‐leakage top‐gate junctions with MoS2. The resulting FeFETs exhibit a record 0.22 V nm−1 memory window, ultrahigh‐k response, and near‐ideal subthreshold swings.
Zejing Guo   +16 more
wiley   +1 more source

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