Results 201 to 210 of about 28,339 (330)
Multi-state MRAM cells for hardware neuromorphic computing
Piotr Rzeszut +5 more
openalex +1 more source
Two donor‐acceptor conjugated polymers, incorporating diketopyrrolopyrrole (DPP) and dialkoxybithiazole (2Tz) units with ethylene glycol (EG) side chains, exhibit relatively balanced ambipolar organic electrochemical transistor (OECT) performance. This ambipolarity enables the realization of single‐component complementary inverters capable of ternary ...
Jiazheng Li +14 more
wiley +1 more source
Wafer-scale fabrication of memristive passive crossbar circuits for brain-scale neuromorphic computing. [PDF]
Choi S +4 more
europepmc +1 more source
A Parasitic Resistance-Adapted Programming Scheme for Memristor Crossbar-Based Neuromorphic Computing Systems [PDF]
Son Ngoc Truong
openalex +1 more source
This study demonstrates a new concept for high‐performance in‐material physical reservoirs (PRs). An intrinsic and cooperative ion–electron state, induced by chemical dedoping in self‐doped poly(3,4‐ethylenedioxythiophene) (S‐PEDOT) nanofilms, enhances the performance of in‐material PRs.
Yuya Ishizaki‐Betchaku +10 more
wiley +1 more source
Fast prototyping of memristors for ReRAMs and neuromorphic computing.
Marraccini G +7 more
europepmc +1 more source
Ultrafast Multilevel Switching and Synaptic Behavior in a Planar Quantum Topological Memristor
Dry‐transferred Bi2Te3 layers enable a planar quantum topological memristor framework. In‐plane topological surface states facilitate ultrafast & low‐power operations. Coexisting analog and digital modes support current‐controlled multilevel states. PQTM exhibits 105 s retention, 103 cycles endurance, and reproducibility across 24 devices.
Mamoon Ur Rashid +12 more
wiley +1 more source
Neuromorphic Computing Using Synaptic Plasticity of Supercapacitors. [PDF]
Wang L, Liu X, Zhang G, Qi F, Chen X.
europepmc +1 more source
All‐Solid‐State Synaptic Transistor with Ultralow Conductance for Neuromorphic Computing
Chuansen Yang +8 more
openalex +2 more sources
Integration of Freestanding High‐k Oxide Membranes for 2D Ferroelectric Field‐Effect Transistors
This work introduces a defect‐tolerant integration strategy that enables freestanding BaTiO3 membranes to form low‐leakage top‐gate junctions with MoS2. The resulting FeFETs exhibit a record 0.22 V nm−1 memory window, ultrahigh‐k response, and near‐ideal subthreshold swings.
Zejing Guo +16 more
wiley +1 more source

