Results 181 to 190 of about 7,322 (252)

In‐Sensor Computing by Soft Threshold Logic Gates Under Different Humidity Conditions

Advanced Electronic Materials, EarlyView.
Soft nanocomposite materials, based on gold cluster‐assembled thin films implanted in polydimethylsiloxane substrate, can perform reliable processing in ambient environmental conditions. Humidity influences the resistive switching and computational capabilities of the nanocomposites, that can be used as multifunctional material combining sensing ...
Giacomo Nadalini, Paolo Milani, Francesca Borghi   +2 more
wiley   +1 more source

A light-driven device for neuromorphic computing. [PDF]

Light Sci Appl
Nath SK.
europepmc   +1 more source

On the Role of Preprocessing and Memristor Dynamics in Reservoir Computing for Image Classification

Advanced Electronic Materials, EarlyView.
ABSTRACT Reservoir computing (RC) is an emerging recurrent neural network architecture that has attracted growing attention for its low training cost and modest hardware requirements. Memristor‐based circuits are particularly promising for RC, as their intrinsic dynamics can reduce network size and parameter overhead in tasks such as time‐series ...
Rishona Daniels, Duna Wattad, Ronny Ronen, David Saad, Shahar Kvatinsky   +4 more
wiley   +1 more source

Ultralow energy adaptive neuromorphic computing using reconfigurable zinc phosphorus trisulfide memristors. [PDF]

Nat Commun
Ji Y, Wang L, Long Y, Wang J, Zheng H, Yu ZG, Zhang YW, Ang KW.   +7 more
europepmc   +1 more source

Research Progress and Applications of Non‐Carrier‐Injection Electroluminescence

Advanced Electronic Materials, EarlyView.
Non‐carrier‐injection electroluminescence (NCI‐EL) uses AC fields and displacement currents to trigger light from internal charge reservoirs, enabling minimalist emitters with remotely coupled terminals. This review maps shared mechanisms across organics, GaN, quantum dots, and TMDCs, compares planar, interdigital, single‐terminal, and coaxial designs,
Wei Huang, Jianbi Le, Rong Chen, Zhixian Lin, Xiongtu Zhou, Yongai Zhang, Chaoxing Wu   +6 more
wiley   +1 more source

Artificial Synapse Based on Black Phosphorus/SnS₂ Heterostructure Transistor for Neuromorphic Computing with High Accuracy. [PDF]

ACS Omega
Lv W, Zeng Y, Wang X, Lv W, Wu X, Tian H, Zhang B, Huang L, Zeng Z.   +8 more
europepmc   +1 more source

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

Advanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

Multifunctional Organic Materials, Devices, and Mechanisms for Neuroscience, Neuromorphic Computing, and Bioelectronics. [PDF]

Nanomicro Lett
Hoch FL, Wang Q, Lim KG, Loke DK.
europepmc   +1 more source

High‐Performance and Environmentally Stable Organic Electrochemical Transistors Enabled by a Reprocessed Self‐Doped PEDOT Channel

Advanced Electronic Materials, EarlyView.
A simple reprocessing strategy based on freeze‐drying and re‐dissolution is introduced to enhance the electrical performance of self‐doped PEDOT while preserving its intrinsic environmental stability. The reprocessed S‐PEDOT enables organic electrochemical transistors with improved drain current, transconductance, and robust operation under high ...
Ruifeng Xu, Hirokazu Yano, Hidenori Okuzaki, Takao Someya, Tomoyuki Yokota   +4 more
wiley   +1 more source

Hydrogen‐Induced Electronic Modulation at MoS2/SiO2 Interfaces

Advanced Electronic Materials, EarlyView.
Hydrogen is shown to tune the conductivity of monolayer MoS2 in protonic electrochemical random‐access memories (ECRAMs). Combined atomistic simulations and device measurements reveal concentration‐dependent n‐type doping when the SiO2 surface is fully saturated, enabling hydrogen to adsorb on MoS2 or incorporate into sulfur vacancies.
Vasileios Fotopoulos, Mantao Huang, Longlong Xu, Matthäus Siebenhofer, Xudong Zheng, Jing Kong, Bilge Yildiz   +6 more
wiley   +1 more source