Results 171 to 180 of about 7,322 (252)

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

open access: yesAdvanced Electronic Materials, EarlyView.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol   +7 more
wiley   +1 more source

A Dual‐Memory Ferroelectric Transistor Emulating Synaptic Metaplasticity for High‐Speed Reservoir Computing

open access: yesAdvanced Electronic Materials, EarlyView.
A CMOS‐compatible ferroelectric transistor harnesses the interplay between stable gate polarization memory and volatile non‐quasi‐static channel charge dynamics to emulate how biological synapses regulate their own plasticity. This brain‐inspired dual‐memory mechanism, realized in a single device, enables a physical reservoir computer that solves ...
Yifan Wang   +8 more
wiley   +1 more source

Ergonomic Sponge Electrodes From Recycled PEDOT:PSS

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Emerging technologies in human–machine interfacing increasingly aim to develop solutions that naturally conform to the body's unique characteristics. Ergonomics and electrical performance in cutaneous sensing are crucial for accurate and reliable translation of biosignals.
Matías Ceballos   +3 more
wiley   +1 more source

Linear and Symmetric Artificial Synapses Driven by Hydrogen Bonding for Accurate and Reliable Neuromorphic Computing. [PDF]

open access: yesAdv Mater
Lee MJ   +10 more
europepmc   +1 more source

SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range

open access: yesAdvanced Electronic Materials, EarlyView.
A physics‐guided compact model for YBCO memristors is introduced, incorporating carrier trapping, field‐induced detrapping, and a differential balance equation to describe their switching dynamics. The model is compared with experiments and implemented in LTspice, allowing realistic circuit‐level simulations.
Thomas Günkel   +6 more
wiley   +1 more source

Frequency Switching Neuristor for Realizing Intrinsic Plasticity and Enabling Robust Neuromorphic Computing. [PDF]

open access: yesAdv Mater
Park W   +12 more
europepmc   +1 more source

Silicon Nitride Resistive Memories

open access: yesAdvanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis   +7 more
wiley   +1 more source

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