Results 161 to 170 of about 7,322 (252)

Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell

open access: yesAdvanced Electronic Materials, EarlyView.
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao   +15 more
wiley   +1 more source

Model‐Based Time‐Modulated Write Algorithm for 1R Analog Memristive Crossbar Arrays

open access: yesAdvanced Electronic Materials, EarlyView.
A novel model‐based time‐modulated write algorithm efficiently programs analog 1R memristive crossbar arrays by varying pulse duration at a fixed voltage. By leveraging a physics‐based compact model and a dynamic gain mechanism, this approach overcomes device nonlinearities and parasitic effects.
Richard Schroedter   +7 more
wiley   +1 more source

Tunable Neuromorphic Computing for Dynamic Multi-Timescale Sensing in Motion Recognition. [PDF]

open access: yesCyborg Bionic Syst
Bie R   +15 more
europepmc   +1 more source

Enhanced High Dimensionality and the Information Processing Capacity in Interfered Spin Wave‐Based Reservoir Computing, Achieved With Eight Detectors

open access: yesAdvanced Electronic Materials, EarlyView.
Physical reservoir computing (PRC) based on spin wave interference has demonstrated high computational performance, yet room for improvement remains. In this study, we fabricated this concept PRC with eight detectors and evaluated the impact of the number of detectors using a chaotic time series prediction task.
Sota Hikasa   +6 more
wiley   +1 more source

Non‐Destructive, Reference‐Free Quantitative Analysis of TaOx Memristive Devices Using Soft X‐Ray Radiation

open access: yesAdvanced Electronic Materials, EarlyView.
A non‐destructive, quantitative approach has been developed to explore the nanoscale dynamics of TaOx‐based memristive devices. The utilization of nano‐X‐ray fluorescence analysis enables the direct probing of spatially resolved elemental distributions, including those present in buried layers, that are critical for the resistive switching.
André Wählisch   +9 more
wiley   +1 more source

Ultra‐Low Power Consumption and Highly Durability in Sm:HfO2 Thin Film Ferroelectric Memristor for Edge Detection

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT With the continuous development of computer image processing, developing efficient and low‐power computing devices has become a key challenge. Memristors have integrated in‐situ storage and computing capabilities, making them an ideal choice for low‐power image processing computing architectures. However, current memristors are confronted with
Tengyu Li   +4 more
wiley   +1 more source

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