Results 131 to 140 of about 17,815 (278)

High‐Endurance STO:YSZ Optoelectronic Memristors with Vertically Aligned Nanocomposite Structure for Edge Detection

open access: yesAdvanced Science
Edge detection plays a critical role in cutting‐edge domains such as real‐time monitoring and automatic driving, with optoelectronic device‐based real‐time image processing garnering significant attention. However, the poor endurance and unstable optical
Jiacheng Wang   +11 more
doaj   +1 more source

Ultrafast Vertical Organic Electrochemical Transistors With Ion‐Permeable Conductive Polymer Top Electrodes

open access: yesAdvanced Materials, EarlyView.
Vertical organic electrochemical transistors (vOECTs) are limited in speed by ion‐impermeable metal electrodes that slow ion injection. Using ion‐permeable PBFDO top electrodes allows direct vertical ion injection into BBL channels, achieving high current densities (>400 A cm−2), large on/off ratios (>106), and ultrafast switching in 28 µs. This sets a
Han‐Yan Wu   +14 more
wiley   +1 more source

Time Series Forecasting via Derivative Spike Encoding and Bespoke Loss Functions for Spiking Neural Networks

open access: yesComputers
The potential of neuromorphic (NM) solutions often lies in their low-SWaP (Size, Weight, and Power) capabilities, which often drive their application to domains that could benefit from this.
Davide Liberato Manna   +4 more
doaj   +1 more source

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

open access: yesAdvanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam   +6 more
wiley   +1 more source

Recent Developments on Novel 2D Materials for Emerging Neuromorphic Computing Devices

open access: yesSmall Structures
The rapid advancement of artificial intelligent and information technology has led to a critical need for extremely low power consumption and excellent efficiency.
Muhammad Hamza Pervez   +10 more
doaj   +1 more source

Self‐Powered Flexible Triboelectric‐Gated Ion‐Gel Transistor for Neuromorphic Tactile Sensing and Human Activity Recognition

open access: yesAdvanced Materials, EarlyView.
A fully flexible ion‐gel‐gated graphene‐channel transistor driven by a triboelectric nanogenerator enables self‐powered tactile sensing and synaptic learning. Mimicking spike‐rate‐dependent plasticity, the device exhibits frequency‐selective potentiation and depression, supporting rate‐coded neuromorphic computation even under flex.
Hanseong Cho   +3 more
wiley   +1 more source

Perovskite Neuromorphic Engine for Transformer Architectures

open access: yesAdvanced Science
AbstractMemristive computing refers to the hardware implementation of artificial neural networks (ANNs) by employing memristive devices. It supports analog multiply‐and‐accumulation (MAC) operation in a compact and highly parallel manner, which can significantly enhance computing efficiency.
Zhenye Zhan   +5 more
openaire   +2 more sources

Photo‐Patternable PEDOT:PSS for High Performance Organic Electrochemical Transistors

open access: yesAdvanced Materials, EarlyView.
Organic mixed ionic‐electronic conductors, such as PEDOT:PSS, are a special class of material capable of dual conductivity, making them a perfect choice to bridge biology and man‐made technology. PEDOT:PSS can be photo‐patterned by blending it with a photo‐sensitive interpenetrating network.
Charles‐Théophile Coen   +4 more
wiley   +1 more source

Perovskite Thin‐Film Transistors for Ultra‐Low‐Voltage Neuromorphic Visions

open access: yesAdvanced Science
Perovskite thin‐film transistors (TFTs) simultaneously possessing exceptional carrier transport capabilities, nonvolatile memory effects, and photosensitivity have recently attracted attention in fields of both complementary circuits and neuromorphic ...
Yang Rong   +16 more
doaj   +1 more source

Field‐Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α‐In2Se3

open access: yesAdvanced Materials, EarlyView.
This study utilizes the van der Waals stacking of ferroelectric α$\alpha$‐In2Se3 to fabricate in‐plane artificial charged domain walls. These charged domain walls are electrically accessible, gate‐tunable, and show 2–9 orders of magnitude higher conductance than charged domain walls from thin film ferroelectrics, allowing their integration in field ...
Shahriar Muhammad Nahid   +6 more
wiley   +1 more source

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