Results 141 to 150 of about 2,424,657 (202)

Hydrogen‐Stabilized Self‐Rectifying Memristor Arrays for Reliable Multilevel Synapses in Transformer‐Based Keyword Spotting

Advanced Science, EarlyView.
A non‐filamentary self‐rectifying HfO2/TiOx resistive random‐access memory integrates H2 annealing with an incremental step pulse with verify algorithm to achieve stable and linear analog conductance modulation. The device enables low‐current 6‐bit multilevel operation while suppressing sneak current in crossbar arrays. Implemented in Transformer‐based
Seonjeong Lee, Seohyeon Ju, Won Joo Lee, Myounggon Kang, Sungjun Kim, Yoon Kim   +5 more
wiley   +1 more source

Hierarchical Multi‐Mode Computing in Interlayer‐Coupled 3D RRAM Crossbar Arrays

Advanced Science, EarlyView.
2‐deck RRAM crossbar array provides a versatile hardware platform for multifunctional in‐memory computing. Stacked, series, and entropy node configurations enable multi‐layer conductance modulation, logic‐in‐memory operation, genetic learning, and reconfigurable physical unclonable functions.
Seungman Park, Jaewoo Choi, Gigon Nam, Junsu Yu, Donghyun Ryu, Jung‐Kyu Lee, Sungjoon Kim, Sungjun Kim   +7 more
wiley   +1 more source

Bioinspired Ionochromic Neuromorphic Transistors for Robotic Intelligent Perception

Advanced Science, EarlyView.
A bioinspired ionochromic neuromorphic transistor couples synaptic conductance modulation with reversible color change through voltage‐controlled ion doping in P3HT/ion gel, mimicking biological synaptic plasticity, and chameleon‐like color regulation.
Quanxing Yao, Xiaojian Zhu, Runsheng Gao, Qian Jiang, Cui Sun, Yi Du, Xuerong Liu, Lixun Wang, Haolong Li, Yuejun Zhang, Run‐Wei Li   +10 more
wiley   +1 more source

Volatile ZrO2 Antiferroelectric Tunnel Junctions for Rapid, Energy‐Efficient Physical Reservoir Computing

Advanced Science, EarlyView.
An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Taegyu Kwon, Moonseek Jeong, Su In Hwang, Geun Hyeong Park, Joonyong Kim, Hyojun Choi, Hyeong Seok Choi, Da Hyun Kim, Dong Hee Han, Ju Yong Park, Seungho Baek, Jung Ho Yoon, Dong Hyun Lee, Min Hyuk Park   +13 more
wiley   +1 more source

Integration of Reconfigurable p‐Bit and 1R Crossbar Array for Memristive Probabilistic Computing

Advanced Science, EarlyView.
A memristive probabilistic computing system is demonstrated by integrating stochastic p‐bits based on volatile memristors with a 1R crossbar array encoding interaction weights. The system performs weighted‐sum operations across the array and updates p‐bits iteratively.
Keunho Soh, Ji Eun Kim, Suk Yeop Chun, Su In Hwang, Byung Seok Kim, Young Jae Lee, Ho Won Jang, Jung Ho Yoon   +7 more
wiley   +1 more source

Wake‐Up and Fatigue under Electrical Cycling in HfO2‐Based Ferroelectrics: Mechanisms and Strategies toward Reliable Devices

Advanced Science, EarlyView.
HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim, Shinhyeong Lee, Hyojun Choi, Minseung Park, Hyunah Cho, Min Hyuk Park, Yunseok Kim   +6 more
wiley   +1 more source

NbOx Mott Memristor‐Based Oscillatory P‐trit for Ternary Potts Machine

Advanced Science, EarlyView.
A ternary Potts machine utilizing NbOx‐based probabilistic trits (p‐trits) is demonstrated for efficient combinatorial optimization. By leveraging the electro‐thermal switching dynamics of NbOx memristors, this architecture generates three‐state stochastic fluctuations.
Hakseung Rhee, Seoeun Jang, Tae Wook Go, Woojoon Park, Gwangmin Kim, Do Hoon Kim, Hanchan Song, Younghyun Lee, Junmo Kang, Daehee Kim, Kyung Min Kim   +10 more
wiley   +1 more source

Voltage‐Reconfigurable Magneto‐Ionic Nanolayers in Dot Arrays for Probabilistic, Materials‐Engineered Security Primitives

Advanced Science, EarlyView.
A magneto‐ionic security‐by‐materials‐design strategy exploits voltage‐driven N3– migration in selectively contacted FeCoN dots, creating reconfigurable sub‐15 nm ferromagnetic sublayers with deterministic and/or probabilistic (single‐domain↔vortex) states, voltage‐tunable probabilities and fully stochastic orientation/chirality.
Irena Spasojevic, Federica Celegato, Alessandro Magni, Paola Tiberto, Jordi Sort   +4 more
wiley   +1 more source

Soft Hypoxia‐Adaptive Bioelectronics Integrating PEDOT:PSS/Polydopamine/Enzyme Biocomposites for Closed‐Loop Therapeutics of Chronic Wounds

Advanced Science, EarlyView.
Hypoxia‐adaptive bioelectronics based on poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)/polydopamine (PDA)/enzyme biocomposites couple O2‐centric biosensing with embedded O2 therapy to address oxygen‐deficient chronic wounds. Local O2 provision restores enzyme‐based metabolite sensing, while catalase‐mediated oxygen generation and
Songrui Liu, Bowen Yang, Cao Qi, Zhijie Zhou, Haochen Zou, Anjum Qureshi, Xiao Zhao, Ting Li, Li Gao, Ye Tao, Gang Song, Pingqiang Cai, Zheng Li, Zhiyuan Liu, Dianpeng Qi, Ting Wang, Lianhui Wang   +16 more
wiley   +1 more source

Scalable Crackle‐Lithography for Multifunctional Enclosed Plastic Nanofluidic Devices

Advanced Science, EarlyView.
Crackle‐lithography enables scalable fabrication of enclosed plastic‐substrate‐based nanofluidic devices with interconnected nanochannels that enable molecular transport, optical interrogation, confined electroless copper deposition, and ionic memristive behavior.
Tirumala Rao Dumpala, S. Kiruthika, Siddhi Vinayak Pandey, Junyang Zhang, Solleti Goutham, Marcos Vinicius Surmani Martins, Harry Whittingham, Boya Radha, Ashok Keerthi   +8 more
wiley   +1 more source