Results 131 to 140 of about 2,424,657 (202)

Dual‐Mode Nanoporous SiO2 Memristors with Coexisting Volatile and Nonvolatile Dynamics for Reservoir Computing

Advanced Science, EarlyView.
A nanoporous SiO2 memristor enabling reconfigurable volatile and non‐volatile switching within a single device is demonstrated. The dual‐mode functionality supports both physical reservoir dynamics and synaptic weight storage, allowing unified hardware implementation of reservoir computing for temporal information processing, including image and ...
Bohao Ding, Tongjun Zhang, Li Shao, Nikolay Zhelev, Andrew L. Hector, Ruomeng Huang   +5 more
wiley   +1 more source

Polarization Dynamics in Ferroelectrics: Insights Enabled by Machine Learning Molecular Dynamics

Advanced Science, EarlyView.
Machine learning molecular dynamics is presented as a route to capture polarization switching, domain wall kinetics, topological polar textures, and polar mechanical coupling beyond the limits of conventional atomistic methods. This Perspective surveys recent progress and identifies key methodological directions, including long‐range electrostatics ...
Dongyu Bai, Ri He, Junxian Liu, Liangzhi Kou   +3 more
wiley   +1 more source

Retinomorphic Visual Processing Enabled by Contact‐Engineered IGZO Optoelectronic Synaptic Memtransistors

Advanced Science, EarlyView.
Here, we present an optoelectronic synaptic memtransistor (OSMT) integrating photoresponsive IGZO with contact‐engineered HfO2, enabling electrically and optically tunable synaptic weights. The device demonstrates broad range of tunable conductance states and array‐level image processing, highlighting its potential for intelligent machine vision ...
Donghyun Kang, San Nam, Dayul Nam, In‐Soo Kim, Myung‐Gil Kim, Sung Kyu Park, Yong‐Hoon Kim   +6 more
wiley   +1 more source

Molecularly Engineered Wing‐Shaped Azobenzene Memristors for Logic‐in‐Memory and Edge Visual Intelligence

Advanced Science, EarlyView.
Rational engineering of terminal substituents in symmetric azobenzene‐based molecules enables precise control over conformationally coupled charge‐transfer processes. This design yields tunable nonvolatile resistive memory behaviors, ranging from write‐once‐read‐many‐times (WORM) to rewritable switching.
Yanze Liu, Tao Han, Jiahui Ding, Hong Lian, Lingling Yao, Zhaoxin Xu, Xingyu Zhang, Shuanglong Wang, Jiangnan Xia, Tianchi Zhang, Weiwei Kang, Qingchen Dong   +11 more
wiley   +1 more source

Intrinsic Dual‐Phase Regulated GeSe2 Nanoparticles Triggered by Ball‐Milling Treatment for Photonic Multi‐Valued Logic Circuits

Advanced Science, EarlyView.
We report the solid‐state ball milling, a traditional, reliable, mass‐productive material processing, to prepare the air‐stable and dual‐phase GeSe2‐x nanoparticles with extended photodetection feasibility toward optical‐wavelength regions. We further display photonic multi‐valued logic (MVL) circuit through the employment of a hybrid PMMA/GeSe2‐x ...
An‐Ting Tsai, Chun‐Jen Wang, Pin‐Chao Liao, Chin Shan Lue, Chia‐Nung Kuo, Le Vo Phuong Thuan, Po‐Hsuan Hsiao, Chang‐Hyun Kim, Chia‐Yun Chen   +8 more
wiley   +1 more source

Radiation Resilient Synthetic Antiferromagnets‐Based Neuromorphic Device for Sea Surface Temperature Reconstruction

Advanced Science, EarlyView.
By leveraging strong antiferromagnetic coupling, radiation‐tolerant synthetic antiferromagnetic synaptic devices are developed. Their intrinsic nonlinearity emulates neuronal activation, while linear and symmetric conductance modulation mimics synaptic plasticity.
Mingxu Song, Jiahao Liu, Ruisheng Hu, Teng Xu, Aihua Tang, Zhihong Zhu   +5 more
wiley   +1 more source

A contribution to neuromorphic engineering: neuromodulation implemented through photochromic compounds maintained out of equilibrium by UV–visible radiation

Rendiconti Lincei SCIENZE FISICHE E NATURALI, 2020
Beatrice Bartolomei, B. Heron, P. Gentili   +2 more
semanticscholar   +1 more source

Anisotropic Memristive Switching in NbOCl2 Enabled by Directional Oxygen Ion Migration

Advanced Science, EarlyView.
This study investigates strongly orientation‐dependent memristive switching in anisotropic NbOCl2, observed exclusively along the in‐plane c‐axis. The switching originates from direction‐selective oxygen‐ion migration and vacancy propagation that modulate the Pd/NbOCl2 Schottky barrier, enabling short‐term plasticity.
Caokun Wang, Yun Ji, Sanchali Mitra, Yufei Shi, Haofei Zheng, Yee Sin Ang, Kah‐Wee Ang   +6 more
wiley   +1 more source

Interface Charge Induced Multifunctional Manipulations in Metals

Advanced Science, EarlyView.
Voltage‑controlled interface charge enables giant, reversible modulation of magnetic anisotropy, magnetization, and resistivity in common metals. Space‑separated ions and electrons accumulate at interfaces, producing strong interfacial capacitor effect and high‑density electrons injection.
Qiang Cao, Yingli Li, Senmiao Liu, Zhen Han, Weixin Liu, Zhaohui Li, Yufeng Tian, Xinglong Ye, Shengshi Li, Qiang Li, Shishen Yan   +10 more
wiley   +1 more source

Polarization Engineering in Vinylene‐Linked COFs Toward Efficient Neuromorphic Computing

Advanced Science, EarlyView.
A vinyl‐linked covalent organic framework (COF‐DIBPY) was synthesized on a conductive substrate for memristor applications. Redox reactions and bromide migration enable low‐voltage (0.5V) conductance switching with high analog on/off ratio (15.7). The device was further integrated into a speech emotion recognition system for acoustic simulation and ...
Hao Wang, Lei Zhao, Haoyuan Yao, Qiongshan Zhang, Fuzhen Xuan, Bin Zhang   +5 more
wiley   +1 more source