Results 111 to 120 of about 22,264 (276)
Deep artificial neural networks (ANNs) can represent a wide range of complex functions. Implementing ANNs in Von Neumann computing systems, though, incurs a high energy cost due to the bottleneck created between CPU and memory.
Gupta, Jayesh K +2 more
core +1 more source
Tin hexathiophosphate memristors leverage intrinsic nanopores together with a guided filament formation strategy to regulate titanium ion motion and switching behavior. The devices support reliable nonvolatile memory and reconfigurable logic‐in‐memory, demonstrating 14 Boolean logic functions in a single cell.
Thaw Tint Te Tun +7 more
wiley +1 more source
A robust solid‐state protein junction with a semi‐transparent eC/Au electrode allows photoexcitation of the bacterio‐rhodopsin, bR layer, to isomerize the bR retinal. The resulting photo‐response shows the protein is functional in the solid‐state junction.
Shailendra K. Saxena +5 more
wiley +1 more source
2D materials-based crossbar array for neuromorphic computing hardware
The growing demand for artificial intelligence has faced challenges for traditional computing architectures. As a result, neuromorphic computing systems have emerged as possible candidates for next-generation computing systems.
Hyeon Ji Lee +6 more
doaj +1 more source
Artificial Synapse Emulated by Indium Tin Oxide/SiN/TaN Resistive Switching Device for Neuromorphic System. [PDF]
Ju D, Kim S, Kim S.
europepmc +1 more source
Molecularly engineered memristors integrating Ag nanoparticle–embedded synthetic DNA with quasi‐2D halide perovskites enable ultra‐low‐operational voltage, forming‐free resistive switching, and record‐low power density. This synergistic integration of customized DNA and 2D OHP in bio‐hybrid architecture enhances charge transport, reduces variability ...
Kavya S. Keremane +9 more
wiley +1 more source
Improved Uniformity of TaOx-Based Resistive Switching Memory Device by Inserting Thin SiO2 Layer for Neuromorphic System. [PDF]
Ju D, Kim S, Jang J, Kim S.
europepmc +1 more source
Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav +6 more
wiley +1 more source
The sensory–neuromorphic interface is key to the application of neuromorphic electronics. Artificial spiking neurons and artificial sensory nerves have been created, and a few studies showed a complete neuromorphic system through cointegration with ...
Lin Sun +9 more
doaj +1 more source
Editorial: Powering the next-generation IoT applications: new tools and emerging technologies for the development of Neuromorphic System of Systems. [PDF]
Urgese G +4 more
europepmc +1 more source

