Results 221 to 230 of about 10,442 (302)

Silicon Nitride Resistive Memories

open access: yesAdvanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis   +7 more
wiley   +1 more source

In‐Sensor Computing by Soft Threshold Logic Gates Under Different Humidity Conditions

open access: yesAdvanced Electronic Materials, EarlyView.
Soft nanocomposite materials, based on gold cluster‐assembled thin films implanted in polydimethylsiloxane substrate, can perform reliable processing in ambient environmental conditions. Humidity influences the resistive switching and computational capabilities of the nanocomposites, that can be used as multifunctional material combining sensing ...
Giacomo Nadalini   +2 more
wiley   +1 more source

On the Role of Preprocessing and Memristor Dynamics in Reservoir Computing for Image Classification

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Reservoir computing (RC) is an emerging recurrent neural network architecture that has attracted growing attention for its low training cost and modest hardware requirements. Memristor‐based circuits are particularly promising for RC, as their intrinsic dynamics can reduce network size and parameter overhead in tasks such as time‐series ...
Rishona Daniels   +4 more
wiley   +1 more source

Event-Driven Neuromorphic Gaze Decoding via e-Skin Electrooculography. [PDF]

open access: yesACS Nano
Jeong S   +23 more
europepmc   +1 more source

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram   +10 more
wiley   +1 more source

Experimental Demonstration of Temporally Aware Fault‐Tolerant Sensor Fusion Using Memristive Associative Learning

open access: yesAdvanced Electronic Materials, EarlyView.
In dynamic driving scenarios, the proposed approach ensures only temporally aligned sensor inputs to make driving decisions, preventing false activations. By enabling selective hardware‐level learning, it achieves fast, reliable responses under noisy conditions.
Kapil Bhardwaj   +4 more
wiley   +1 more source

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