Results 231 to 240 of about 154,916 (330)

In‐Operando 4D‐STEM and STEM‐EBIC Imaging of Electric Fields and Charge Carrier Behavior in Biased Silicon p–n Junctions

Advanced Electronic Materials, EarlyView.
This work presents a study of how 4D‐STEM centre of mass measurements and STEM‐EBIC can be used to map the positions, directions, and strengths of electric fields in semiconductor devices. The contrast mechanisms of both techniques are tested and compared with simulations to build a robust analysis of an in situ device in the electron microscope ...
Eoin Moynihan, Yining Xie, David Cooper, Grigore Moldovan, Richard Beanland, Ana Sanchez   +5 more
wiley   +1 more source

Photothermal skyrmion tweezer: programmable optical manipulation of magnetic topological quasiparticles. [PDF]

Nat Commun
Kim J, Yang S, Kim D, Moon KW, Kim C, Hwang C, Seo MK.   +6 more
europepmc   +1 more source

Neutral Beam Injection Calculations for Torsatrons

, 1979
Anderson, D. T., Shohet, J. L., Rehker, S., Tataronis, J. A.   +3 more
openaire   +2 more sources

Environmental Stability and Electronic Properties of Individual Flakes of Ti2CTx MXene

Advanced Electronic Materials, EarlyView.
The paper presents a synthesis of large Ti2CTx MXene flakes with sizes reaching 40 µm and examines their environmental stability and electronic behavior. It demonstrates that monolayer flakes degrade rapidly in ambient conditions, leading to semiconducting‐like behavior with low conductivity and mobility. In contrast, multilayer flakes exhibit enhanced
Md. Ibrahim Kholil, Alexey Lipatov, Saman Bagheri, Hanna Pazniak, Venera Alimova, Alexander Sinitskii   +5 more
wiley   +1 more source

Entanglement generation between different center-of-mass motions in double levitated micromagnet system. [PDF]

Sci Rep
Liu W, Rao S.
europepmc   +1 more source

A Polymorphic Reconfigurable Multi‐Electrode Device Based on Electrically Bistable Nanostructured Metallic Films

Advanced Electronic Materials, EarlyView.
A polymorphic reconfigurable multi‐electrode device based on electrically bistable nanostructured metallic films. The adaptive reconfiguration properties of the nanostructured network under specific input voltages drive the reprogrammability of the device. This system can be employed for the implementation of polymorphic devices, which can be used both
Silvia Bressan, Luca Camillini, Francesca Borghi, Giovanni Galafassi, Paolo Milani   +4 more
wiley   +1 more source

A transportable laser-plasma accelerator in the MeV range. [PDF]

Sci Rep
Morel E, Kononenko O, Wheeler J, Ayeb A, Rousseau P, Lozano M, Tafzi A, Martelli L, André YB, Palacios SR, Dinh XQ, Denis JP, Kraft H, Demengeot P, Houard A, Thaury C.   +15 more
europepmc   +1 more source

Reversible and Controllable Transition Between Filamentary and Interfacial Resistive Switching in HfO2‐Based Memristors

Advanced Electronic Materials, EarlyView.
5 nm HfO2 memristors exhibit a fully reversible, voltage‐controlled transition between filamentary and interfacial switching within the same device. At high voltages, a filament forms and dominates the conduction, whereas at lower voltages the device reversibly returns to interfacial mode without defect accumulation, implying a new reversible ...
Cuo Wu, Hao Shen, Richard Schroedter, Chong Peng, Hampus Hoffman, Stefan Slesazeck, Ronald Tetzlaff, Thomas Mikolajick, Benjamin Max   +8 more
wiley   +1 more source

Experimental determination of structural motifs of interference-free water undecamer cluster (H₂O)₁₁. [PDF]

Nat Commun
Wang T, Zhang YY, Jiang S, Yan W, Li S, Zheng H, Lu JB, Hu HS, Yang J, Zhang W, Wu G, Xie H, Li G, Li J, Jiang L, Yang X.   +15 more
europepmc   +1 more source

Tunable Electronic and Optoelectronic Properties of MoS2 Through Molecular Coverage‐Controlled Polyoxometalate Doping

Advanced Electronic Materials, EarlyView.
Molecular charge transfer at the V12‐DyPc/MoS2 interface stabilizes trions, suppressing neutral A‐exciton emission and enabling controlled modulation of the A–‐trion population, bridging excitonic physics with polyoxometalate charge‐transport functionality.
Jean‐Pierre Glauber, Marco Moors, Dmitry A. Ryndyk, Emad Najafidehaghani, Jonas Lorenz, Rahel‐Manuela Maas, Nils Boysen, Harish Parala, Thomas Heine, Anjana Devi, Kirill Monakhov   +10 more
wiley   +1 more source