Results 21 to 30 of about 269,089 (289)
Color Glass by Layered Nitride Films for Building Integrated Photovoltaic (BIPV) System
Crystals, 2021 We investigated layered titanium nitride (TiN) and aluminum nitride (AlN) for color glasses in building integrated photovoltaic (BIPV) systems. AlN and TiN are among suitable and cost-effective optical materials to be used as thin multilayer films, owing
Akpeko Gasonoo +4 more
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Dissolution Behavior of a Titanium Nitride Sponge in Titanium Alloy Melt [PDF]
MATEC Web of Conferences, 2020 The dissolution behaviors of titanium nitride titanium sponges in titanium alloy melt were examined. A titanium nitride sponge was produced using nitrogen gas. The titanium nitride sponge featured a porous structure. Porous structures at both the surface
Mizukami Hideo +2 more
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ChemEngineering, 2021 Using a high-flux solar furnace, loosely compacted powders of Va-group transition metal (V, Nb, and Ta) were reacted with stream of NH3 gas (uncracked NH3 gas) being heated by concentrated solar beam to a temperature (T) range between 600 and 1000 °C ...
Nobumitsu Shohoji +6 more
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A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire
Applied Sciences, 2018 This paper reviews the progress of AlGaN-based deep-ultraviolet (DUV) light emitting diodes (LEDs), mainly focusing in the work of the authors’ group.
Yosuke Nagasawa, Akira Hirano
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Shear Transformation of Austenite in Steels Considering Stresses’ Effects
Успехи физики металлов, 2022 The currently known main mechanisms of martensitic transformation of austenite in steel during cooling, physical models, and schemes of shear rearrangement of the iron crystal lattice during γ→α transformation under the action of internal stresses are ...
S. V. Bobyr, E. V. Parusov, G. V. Levchenko, A. Yu. Borisenko, and I. M. Chuiko
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Nitridation-Etch of Silicon Oxide in Fluorocarbon/Nitrogen Plasma: A Computational Study
Journal of Microelectronic Manufacturing, 2019 The continually increasing number of silicon oxide (SiO2) and nitride (Si3N4) layers in 3D-NAND offers both motivations and challenges for developing all-in-one plasma etch solutions for etching SiO2 and Si3N4 at a selectivity near unity while ...
Du Zhang +3 more
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Silicon Nitride Etch via Oxidation Reaction in Fluorocarbon/Oxygen Plasma: A First-Principle Study
Journal of Microelectronic Manufacturing, 2018 Conducting all-in-one etch process for 3D-NAND fabrication requires close etch rate (E/R) for SiO2 and Si3N4; however, to attain comparable and high etch rate for both materials is challenging.
Yu-Hao Tsai, Du Zhang, Mingmei Wang
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Sensors, 2022 A high-speed and high-power current measurement instrument is described for measuring rapid switching of ferroelectric samples with large spontaneous polarization and coercive field. Instrument capabilities (±200 V, 200 mA, and 200 ns order response) are
Keisuke Yazawa +2 more
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Sealing of micromachined cavities using chemical vapor deposition methods: characterization and optimization [PDF]
, 1999 This paper presents results of a systematic investigation to characterize the sealing of micromachined cavities using chemical vapor deposition (CVD) methods.
Liu, Chang, Tai, Yu-Chong
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Numerical Study of Growth Rate and Purge Time in the AlN Pulsed MOCVD Process
Crystals, 2022 The relationship between the purge time and the overall growth rate in pulsed injection metal–organic chemical vapor deposition with different V/III ratios is studied by numerical analysis. The transport behavior of TMAl and TMAlNH3 during the process is
Wei-Jie Lin, Jyh-Chen Chen
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